Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor

Abstract

Index Terms-InGaAsN, I-HIT,Aluminum-free, and P-n-p.

RF characteristics of GaAs/InGaAsN/GaAs P-n-P double heterojunction bipolar transistors

“…Despite recent advances in the InGaAsN material, the crystal quality of the InGaAsN base is still inferior to that of a GaAs base, showing lower photoluminescence intensity, for example. However, the Vo~of the InGaAsN DHBT is about 0.27 V lower than in the comparable GaAs HBT, and even slightly lower than the 0.25 V for a comparable AIGaAs/InGaAsN HBT reported previously [7]. The resulting offset voltage (VorfXJof 0.06 V is also significantly lower than the 0.13 V observed in the GaAs HBT.…”

“…However, it is more likely that the~difference is due to excess base recombination in InGaAsN compared to GaAs. In our earlier work a AlGa4s/InGaAsN P-n-P DHBT showed lower~than the AlGa4s/GaAs HBT in spite of a larger A& [7]. Despite recent advances in the InGaAsN material, the crystal quality of the InGaAsN base is still inferior to that of a GaAs base, showing lower photoluminescence intensity, for example.…”

Highly Stable Thermal Characteristics of a Novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs High-Electron-Mobility Transistor

“…Long-wavelength, 1.2 -1.3 mm laser diodes with In x Ga 1Àx As 1Ày N y or InGaAsNSb compounds grown on the GaAs substrates have attracted great interest. [3][4][5] InGaAsN-based heterojunction bipolar transistors (HBTs) [6][7][8] have also demonstrated significant reductions in the turn-on voltage compared with AlGaAs-based HBTs. Although the incorporation of nitrogen atoms into InGaAs compounds can reduce the energy band gap, so far this has usually resulted in poor crystal quality crystals.…”

A study of dilute nitride compounds grown by molecular beam epitaxy for electronic application

“…The use of InGaAsN as the base of HBTs has been investigated recently [17][18][19]. A principal goal of these research activities is to demonstrate the reduction in the turn-on voltage without compromising the high microwave performance of the transistors.…”

“…Thus, it further confirms that the PL peak in Be-doped InGaAsN originates from LE emission, and not from band-acceptor transition. Photoluminescence Properties of Be-doped InGaAsN #A(p=1.0x10 16 cm~3) -°-#B(p=3.3x10 17 cm" 3 ) -o-#C(p=1.4x10 18 cm" 3 ) -A-#D(p=4.0x1018 cm" 3 ) -+-#E(p=1.2x1019 cm" 3 ) Low temperature (5 K) PL spectra of as-grown Samples A-E. Photolumincscencc Properties of Be-doped InGaAsN As for the deep PL band, it may originate from recombinations associated with Nrelated traps. Because of the high electronegativity of the N atom, electrons are easily trapped by these defects to form negatively charged centers.…”