RF characteristics of GaAs/InGaAsN/GaAs P-n-P double heterojunction bipolar transistors

Abstract

Abstract--We have demonstrated a P-n-P Ga&JInGaAsN/GaAs double heterojunction bipolar transistor (DHBT).The device has a low turn-on voltage (Vo~) that is 0.27 V lower than in a comparable P-n-p AIGaAs/GaAs HBT. The device shows nearide.al DC characteristics with a curfent gain (~) greater than 45. The high-speed performance of the device are comparable to a similar P-n-p AIGaAs/GaAs HBT, with~~and~M~x values are both approximately 12 GHz.. This device may be suitable for low-power complementary HBT arcuit applications, while the aluminum-free emitter structure eliminates issues typically associated with AIGaAs.