Purge Effect on Heterointerfaces of ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy

Abstract

Heterointerface properties of ZnSe/MgS superlattices (SLs) grown by -0.52pt metalorganic vapor phase epitaxy (MOVPE) are characterized using X-ray diffraction measurements and in situ monitoring of optical multiple reflection in the SL films. These studies showed the formation of MgSe-related extra interface layers in the SLs. It was found that a purge with a Zn precursor effectively suppresses the extra interface layer formation. By a purge with a Zn precursor, linewidths of the photoluminescence (PL) spectra became much narrower than those of SLs grown without purging. Monolayer exciton PL peaks were clearly observed in a SL with narrow wells. This demonstrates that a purge with a Zn precursor effectively improves the abruptness and the atomic flatness of the ZnSe/MgS heterointerfaces.

Exciton Binding Energies in ZnSSe/MgSSe Quantum Wells Lattice Matched to GaAs Substrates

“…Therefore, the phenomenon of radiative recombination of excitons has been exploited to enable the use of ZnSebased QWs in the fabrication of blue LDs. In particular, ZnSe/MgS QWs have been experimentally studied for their use in the fabrication of blue optoelectronic devices [6][7][8]. Changes in the exciton binding energies with the well width (L w ) have been measured for ZnSe/MgS QWs [9].…”

Proposal for ZnS/MgxBeyZn1-x-yS Quantum Wells

“…The Be-chalcogenides are therefore considered to be promising candidates for the fabrication of blue-ultraviolet-light-emitting devices. On the other hand, ZnSe/MgS multiple quantum wells (MQWs) [11][12][13][14] and single quantum wells (SQWs) 15,16) have been studied for the fabrication of blue opto-electric devices using binary materials. In addition, the excitonic properties of ZnS/MgZnS SQWs have been discussed for ultraviolet (UV) application.…”