Bismuth tri-iodide (BiI 3 ) is an attractive material for room temperature radiation detectors because of its wide bandgap energy and high photon stopping power. In this paper, BiI 3 crystals have been grown by the vertical Bridgman technique using commercially available powder. The grown crystals have been characterized in terms of their structural properties and stoichiometry. Room temperature radiation detectors have been fabricated from the crystals and tested by measuring their leakage currents and spectral responses. A clear peak corresponding to 5.48 MeV -particles ( 241 Am) was recorded with an 82 m thick BiI 3 detector with palladium electrodes of 1 mm in diameter. The energy resolution of the 5.48 MeV peak was found to be 2.2 MeV FWHM.Index Terms-Bismuth tri-iodide, semiconductor detector.

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A compound semiconductor, thallium bromide (TlBr), has been investigated as an optical and radiation detector material for use in X-and -ray spectroscopy. Single crystals of TlBr have been grown by the traveling molten zone method using zone-purified materials. X-and -ray detectors have been fabricated from the TlBr crystals. The TlBr detectors have exhibited good spectrometric performances at room temperature. Polarization in TlBr detectors has been observed to deteriorate detector performance. Optical detectors for scintillation spectroscopy have been fabricated from the crystals by depositing optically transparent electrodes of indium-tin-oxide (ITO) on the front surfaces of the crystals. The quantum efficiency of the TlBr optical detectors is high in the wavelength region below 460 nm, where the scintillation emissions of LSO and GSO occur.Index Terms-Optical detector, semiconductor detector, thallium bromide (TIBr).

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