Purely electronic nanometallic resistance switching random-access memory

Abstract

Abstract

Porphyrin‐Based Metal–Organic Frameworks for Neuromorphic Electronics

“…The common charge trapping/detrapping‐based memristor suffers from the voltage–time dilemma, that is, a memristor is less likely to meet simultaneously the requirements of fast switching time, small switching voltage, and long retention time, because there is the same barrier need to be overcome during writing/erasing and retention processes. [ 83 ] The nanometallic memristor can avoid this dilemma due to its ultrathin amorphous insulator and deformable “soft spots”. [ 83 ] In the amorphous insulator, the nanometallicity can be observed when the electron transport distance ( r ) falls below the localization length ( ζ ).…”

“…To solve this problem, electrode engineering, filament confinement, and some purely electronic memristors, have been developed. [ 83,85,94 ] Besides, exploring novel functional materials as active layers and taking a comprehensive understanding of the switching physics and material properties are required for developing high‐performance memristors.…”

DC resistance degradation of SrTiO3: The role of virtual‐cathode needles and oxygen bubbles

“…Like most insulators, acceptor‐doped perovskite titanates such as SrTiO 3 (STO) may breakdown under a DC voltage () or field (). Dielectric breakdown has long been studied by highly accelerated lifetime tests (HALTs), 1‐4 which continues today with new attention to multilayer ceramic capacitors (MLCCs) 5 and resistance random memory access memories (ReRAMs) 6‐8 . Collected from bulk samples, HALT data on voltage‐induced resistance ( R ) degradation can inform the lifetime () and reliability of thin ceramic and nano film devices 9‐17 .…”

“…Dielectric breakdown has long been studied by highly accelerated lifetime tests (HALTs), 1-4 which continues today with new attention to multilayer ceramic capacitors (MLCCs) 5 and resistance random memory access memories (ReRAMs). [6][7][8] Collected from bulk samples, HALT data on voltage-induced resistance (R) degradation can inform the lifetime (t f ) and reliability of thin ceramic and nano film devices. [9][10][11][12][13][14][15][16][17] HALT is also relevant to flash sintering [18][19][20] of titanates, [21][22][23][24] for both phenomena feature an abrupt, huge rise in current density (J) and Joule…”

“…23,[31][32][33][34][35][36][37][38] T in these cases to determine the resin flow ing times corresponding to different infilt Preceramic polycarbosilane polymers as precursors to make ceramic fibers 10,3 trix. [7][8][9]40,41 The chemical and volume ch pany ceramization of the polymer during documented in several studies. For exam 42 ].…”