Abstract:Spin accumulation is generated by passing a charge current through a ferromagnetic layer and sensed by other ferromagnetic layers downstream. Pure spin currents can also be generated in which spin currents flow and are detected as a nonlocal resistance in which the charge current is diverted away from the voltage measurement point. Here, we report nonlocal spin-transport on two-dimensional surface-conducting SrTiO 3 (STO) without a ferromagnetic spin-injector via the spin Hall effect (and inverse spin Hall eff… Show more
“…The spin accumulation developed in the system is reflected in the hysteresis of the magnetoresistance and anomalous Hall effect curves [35] and the Hall conductivity measured using a Hall bar geometry [36]. The spin currents developed in the system may be measured via non-local measurements of the voltage developed across one pair of transverse arms of a H-shaped Hall bar system due to the inverse spin Hall effect when a fixed charge current is passed through the other pair of transverse arms [13,47], or elucidated from spin pumping measurements in ferromagnetic [48] or electron spin resonance [49] experiments.…”
Certain non-centrosymmetric materials with broken time-reversal symmetry may exhibit non-reciprocal transport behavior under an applied electric field in which the charge and spin currents contain components that are second order in the electric field. In this study, we investigate the second-order spin accumulation and charge and spin responses in the LaAlO3/SrTiO3 (LaO/STO) system with magnetic dopants under the influence of linear and cubic Rashba spin‒orbit coupling (RSOC) terms. We explain the physical origin of the second-order response and perform a symmetry analysis of the first and second-order responses for different dopant magnetization directions relative to the applied electric field. We then numerically solve the Boltzmann transport equation by extending the approach of Schliemann and Loss [Phys. Rev. B 68, 165311] to higher orders in the electric field. We show that the sign of the second-order responses can be switched by varying the magnetization direction of the magnetic dopants or relative strengths of the two cubic RSOC terms and explain these trends by considering the Fermi surfaces of the respective systems. These findings provide insights into the interplay of multiple SOC effects in a LaO/STO system and how the resulting first- and second-order charge and spin responses can be engineered by exploiting the symmetries of the system.
“…The spin accumulation developed in the system is reflected in the hysteresis of the magnetoresistance and anomalous Hall effect curves [35] and the Hall conductivity measured using a Hall bar geometry [36]. The spin currents developed in the system may be measured via non-local measurements of the voltage developed across one pair of transverse arms of a H-shaped Hall bar system due to the inverse spin Hall effect when a fixed charge current is passed through the other pair of transverse arms [13,47], or elucidated from spin pumping measurements in ferromagnetic [48] or electron spin resonance [49] experiments.…”
Certain non-centrosymmetric materials with broken time-reversal symmetry may exhibit non-reciprocal transport behavior under an applied electric field in which the charge and spin currents contain components that are second order in the electric field. In this study, we investigate the second-order spin accumulation and charge and spin responses in the LaAlO3/SrTiO3 (LaO/STO) system with magnetic dopants under the influence of linear and cubic Rashba spin‒orbit coupling (RSOC) terms. We explain the physical origin of the second-order response and perform a symmetry analysis of the first and second-order responses for different dopant magnetization directions relative to the applied electric field. We then numerically solve the Boltzmann transport equation by extending the approach of Schliemann and Loss [Phys. Rev. B 68, 165311] to higher orders in the electric field. We show that the sign of the second-order responses can be switched by varying the magnetization direction of the magnetic dopants or relative strengths of the two cubic RSOC terms and explain these trends by considering the Fermi surfaces of the respective systems. These findings provide insights into the interplay of multiple SOC effects in a LaO/STO system and how the resulting first- and second-order charge and spin responses can be engineered by exploiting the symmetries of the system.
“…Interfacial two-dimensional electron gases (2DEGs) based on insulating oxide SrTiO 3 (STO), especially the paradigm of LaAlO 3 /SrTiO 3 (LAO/STO), have been of tremendous interest since their discovery in 2004, which have evolved into a platform for both fundamental research and potential electronics and spintronics applications . Various emergent phenomena have been observed at STO-based heterointerfaces, such as superconductivity, , quantum oscillations, − Rashba spin–orbit coupling, − spin-to-charge interconversion, ,, giant tunability via multiple external stimuli, − and ferromagnetism − or spin polarization. − Especially, the combination of high mobility and spin polarization endows STO-based heterostructures with prosperous applications in spin-based logic and memory devices. − …”
Spin-polarized two-dimensional electron gases (2DEGs) at the interfaces of SrTiO 3 -based correlated oxides have attracted tremendous attention in electronics and spintronics. Hitherto, the transition temperature (T C ) for such spin polarization remains very low at around 20 K, seriously restricting further spin-based applications. Here, we demonstrate a new strategy to greatly enhance the spin polarization at the interfaces of the prototypical LaAlO 3 /SrTiO 3 by conveniently inserting a SrCoO 2.5 -patterned Hall-bar layer. In the modified interfacial heterostructure, signatures of spin polarization, such as the Kondo effect, hysteretic magnetoresistance, magnetic hysteresis loop, and anomalous Hall effect, are all unambiguously observed. The T C of spin polarization deduced from the anomalous Hall effect is promoted to a significantly high temperature of 100 K, much higher than any reported values for 2DEGs at oxide interfaces. Combining atomic-level resolution electron energy-loss spectroscopy, X-ray absorption spectroscopy, and X-ray magnetic circular dichroism spectroscopy, the origin of spin polarization is attributed to the occurrence of Ti 3+ ions located around the interfaces. This work opens up a reliable interfacial engineering route to enhance the spin polarization in 2DEGs at oxide interfaces, which is applicable for practical spin-based logic and memory devices.
“…The strontium titanate SrTiO 3 (STO) is a band insulator yet has been a preferred platform for oxide spintronics, providing two-dimensional electron gas in the form of LaAlO 3 /STO ,,, and Al 2 O 3 /STO , heterostructures and doped STO surfaces. ,− Ion milling on the STO bare surface changes the surface state from insulating to a high-mobility conducting surface by creating oxygen vacancies, which work as electron doping. − This metallic conducting surface is subjected to the Rashba spin–orbit interaction as theoretically expected. − The angle resolved photoemission spectroscopy (ARPES) of the ultraviolet (UV) radiation STO surface states showed band splitting. − The charges to spin conversion and spin galvanic effects were observed in an Ar + irradiation STO conducting surface, confirming the presence of robust Rashba spin–orbit interactions. The nonreciprocal charge transport was also observed in the Ar + -irradiated STO (111) surface at low temperatures, demonstrating the chiral spin texture of the surface states …”
Systems having inherent structural
asymmetry retain the Rashba-type
spin–orbit interaction, which ties the spin and momentum of
electrons in the band structure, leading to coupled spin and charge
transport. One of the electrical manifestations of the Rashba spin–orbit
interaction is nonreciprocal charge transport, which could be utilized
for rectifying devices. Further tuning of the Rashba spin–orbit
interaction allows additional functionalities in spin–orbitronic
applications. In this work, we present our study of nonreciprocal
charge transport in a conducting SrTiO3 (001) surface and
its significant enhancement by a capping layer. The conductive strontium
titanate SrTiO3 (STO) (001) surface was created through
oxygen vacancies by Ar+ irradiation, and the nonreciprocal
signal was probed by angle- and magnetic field-dependent second harmonic
voltage measurement with an AC current. We observed robust directional
transport in the Ar+-irradiated sample at low temperatures.
The magnitude of the nonreciprocal signal is highly dependent on the
irradiation time as it affects the depth of the conducting layer and
the impact of the topmost conducting layer. Moreover, the nonreciprocal
resistance was significantly enhanced by simply adding a MoO3 capping layer on the conductive STO surface. These results show
a simple methodology for tuning and investigating the Rashba effect
in a conductive STO surface, which could be adopted for various two-dimensional
(2D) conducting layers for spin–orbitronic applications.
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