Pupilgram adjusting scheme using intelligent illuminator for ArF immersion exposure tool

Matsuyama, Tomoyuki; Kita, Naonori; Mizuno, Yasushi

doi:10.1117/12.879395

Cited by 9 publications

(8 citation statements)

References 4 publications

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“…The use of the controllable illumination pupil consisting of numerous point sources may become popular in conventional imaging systems such as microscopes; this approach has already been realized in advanced lithography systems [24][25][26][27][28]. We believe that our basic theory can be utilized to determine the basic specifications for the controllable illumination pupil from the viewpoint of spatial coherence.…”

Section: B Possible Application Of Our Approach For Determining Basimentioning

confidence: 99%

“…Let us assume that the illumination pupil consists of N point sources. In this regard, we remark that, to enhance the imaging properties in advanced micro-photolithography, the complex free-form illumination shape has been utilized recently [24][25][26][27][28]. The illumination pupil can comprise more than 10,000 deg of point sources.…”

Section: Intensity Matrix: Case Of N Point Sourcesmentioning

confidence: 99%

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Analytical solution for Gamo entropy under spatially partial coherent illumination

Yashiki¹

2015

J. Opt. Soc. Am. A

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We present a methodology for obtaining the analytical solution of the Gamo entropy, defined by the intensity matrix proposed by Gamo [J. Opt. Soc. Am.47, 976 (1957)JOSAAH0030-394110.1364/JOSA.47.000976]. The matrix, which consists of numerous image amplitudes at all the sampling points of the entire imaging plane, is generally infinite-dimensional. The essence of our theory is that the computational difficulties arising because of the infinite-dimensionality are avoided by introducing the inner products of two image amplitudes. The integral in continuous space plays the role of a buffer against the infinite-dimensionality. The validity of the approach is confirmed by comparing our analytical solution and Yamazoe's numerical simulations [J. Opt. Soc. Am. A28, 448 (2011)JOAOD60740-323210.1364/JOSAA.28.000448].

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Section: B Possible Application Of Our Approach For Determining Basimentioning

confidence: 99%

Section: Intensity Matrix: Case Of N Point Sourcesmentioning

confidence: 99%

Analytical solution for Gamo entropy under spatially partial coherent illumination

Yashiki¹

2015

J. Opt. Soc. Am. A

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“…The typical controllable parameters for this measurement include the illumination pupils, one-dimensional measurement patterns, and orientations of measurement patterns. To enhance the imaging quality of the latest ArF exposure apparatus, the illumination pupil consists of more than 10,000 deg of freedom, which are known as intelligent illuminator units by the Nikon Corporation [19][20][21][22][23]. Thus, the free-form shape of nonsymmetric illumination is available for this design.…”

Section: Measurement Of Full Wavefront Aberration a Simultaneous Linmentioning

confidence: 99%

Parity decomposition theory of full wavefront aberration measurement using the intensity differences of aerial images in microlithography

Yashiki¹

2015

Appl. Opt.

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The theory of full wavefront aberration measurements is developed using the intensity differences of aerial images, which are the projected images of one-dimensional measurement patterns consisting of single- or multibars. The key concept is the parity decomposition about the optical axis for two optical components: illumination pupil and wavefront aberration. An additional mathematical treatment, which is a perturbative approach with regard to aberration, is applied to the partially coherent imaging formula. The intensity difference of the two peaks has terms that are linear to the odd and even aberration with rigorously canceled squared aberration terms. The full wavefront aberration measurement is realized from simultaneous linear equations about the intensity difference. The validity of this approach is numerically confirmed under practical lithography conditions.

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“…As we push the limits of immersion lithography, continuously reducing k1, we are also shrinking the PW due to ever increasing sensitivities to lens apodization, mask errors and illumination pupil errors [6]. This is clearly an untenable situation.…”

Section: ) Illuminatormentioning

confidence: 99%

Extendible scanner platforms for mass production, now and in the future

Khorram

2011

2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference

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Increasing demand in technology requirements from IC manufacturers has necessitated that photolithography equipment suppliers design and build tools with many advanced capabilities. These additional features not only add to the complexity of the tools, but also increase the cost. Therefore, in order to keep lithography affordable, it is essential that equipment suppliers increase equipment productivity and extend tool lifetimes to support multiple process generations.As a further challenge, the requirements from different IC manufacturers can be quite dissimilar even for the same technology node (as defined according to the ITRS roadmap). For example, for upcoming process nodes logic manufacturers may require enhanced flexibility to enable imaging of smaller and more complicated features, coupled with tighter overlay performance. In contrast, memory manufacturers may put more emphasis on Critical Dimension Uniformity (CDU) control. Therefore, today's photolithography scanners must be equipped with the latest technologies to achieve better resolution and heightened overlay accuracy, while at the same time delivering continuous improvements to throughput.In order to extend the usable lifetime of the scanner on to nextgeneration technologies, the system platform must also accommodate further improvements and/or upgrades to achieve the demanding requirements of the future. In addition, the scanners must be flexible enough to integrate Complementary Technologies (CT) that are being developed in parallel to further enhance scanner performance.Litho scanner suppliers are actively addressing these issues and Nikon has developed the Sx20 platform to provide an extendible platform for dry and immersion scanner applications. Immersion scanners such as the NSR-S620D are currently being used in mass production, and support future upgrades to enable enhancements to accuracy and throughput for next-generation manufacturing.In this paper some of the key design concepts of an extendible scanner platform will be discussed. These include enhancing the accuracy and maximizing productivity of the manufacturing environment, which is vital in ensuring the affordability of lithography in the future. To show industry progress in these areas, current performance from leading edge scanners that include overlay, auto focus, and Optical Proximity Effect (OPE) matching data will be presented. In addition, it will be shown how these scanners deliver overlay accuracy sufficient for the 32 nm node and beyond, with focus uniformity less than 20nm (3σ), while utilizing a platform capable of throughput up to 200 wafers per hour.Further, to support future technology nodes, scanners also need to accommodate advanced imaging solutions such as free form illumination sources, Source Mask Optimization (SMO) and Double Pattern Techniques (DPT). Some of these technologies, as well as how they must be integrated with flexible and extendible scanner platforms in order to keep next-generation lithography affordable, will be discussed in this paper [1].

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Pupilgram adjusting scheme using intelligent illuminator for ArF immersion exposure tool

Cited by 9 publications

References 4 publications

Analytical solution for Gamo entropy under spatially partial coherent illumination

Analytical solution for Gamo entropy under spatially partial coherent illumination

Parity decomposition theory of full wavefront aberration measurement using the intensity differences of aerial images in microlithography

Extendible scanner platforms for mass production, now and in the future

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