Pulsed laser-induced silicidation on TiN-capped Co∕Si bilayers

Abstract

This paper studies the effects of pulsed laser-induced annealing of TiN-capped Co/ Si bilayers with and without preamorphized Si substrate. For a low fluence of 0.2 J / cm 2 , nonstoichiometry Co silicide with triple-layered structure is formed. On the other hand, highly textured CoSi 2 grains in ͑111͒ direction are formed for a high fluence of 0.7 J / cm 2 . The highly textured CoSi 2 layer is monocrystalline and fully coherent with the ͑111͒ plane of the Si substrate. However, it has a large amount of microstructural defects throughout the layer. Competitive growth mechanisms between crystallization of homogenous intermixed layer and the nucleation from the melt boundary are discussed.