Pulsed laser deposition of oriented VO2 thin films on <i>R</i>-cut sapphire substrates

Borek, M. A.; Qian, Feng; Nagabushnam, V.; Singh, Rajiv K.

doi:10.1063/1.110177

Cited by 113 publications

(48 citation statements)

References 14 publications

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“…In particular, aspects of the transition have been examined during thermal and optical inducements. [3][4][5][6][7] It is also known that a negative differential resistance (NDR) is observed when the current-voltage characteristic of this material is controlled by a static current. 8,9 Such an experiment allows the measurement of the MIT with respect to temperature.…”

mentioning

confidence: 99%

Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse

Chae¹,

Kim²,

Youn³

et al. 2005

Physica B: Condensed Matter

122

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An abrupt metal-insulator transition (MIT) was observed in VO2 thin films during the application of a switching voltage pulse to two-terminal devices. Any switching pulse over a threshold voltage for the MIT of 7.1 V enabled the device material to transform efficiently from an insulator to a metal. The characteristics of the transformation were analyzed by considering both the delay time and rise time of the measured current response. The extrapolated switching time of the MIT decreased down to 9 ns as the external load resistance decreased to zero. Observation of the intrinsic switching time of the MIT in the correlated oxide films is impossible because of the inhomogeneity of the material; both the metallic state and an insulating state co-exist in the measurement volume. This indicates that the intrinsic switching time is in the order of less than a nanosecond. The high switching speed might arise from a strong correlation effect (Coulomb repulsion) between the electrons in the material.Vanadium dioxide, VO 2 , possesses a first-order metalinsulator transition (MIT) making it an attractive material for switching devices.1-3 The MIT occurs near 68 • C and is accompanied by a structural phase transition. Various transition properties have been studied such as crystal structure and other physical quantities. In particular, aspects of the transition have been examined during thermal and optical inducements.3-7 It is also known that a negative differential resistance (NDR) is observed when the current-voltage characteristic of this material is controlled by a static current. 8,9 Such an experiment allows the measurement of the MIT with respect to temperature. The current-controlled NDR has been widely investigated for the various compounds of vanadium oxide. 8-10The resistance of the systems abruptly changes at the transition point in contrast to the NDR properties of a conventional semiconductor system. The MIT behavior controlled by a static current is extremely stable and reversible.9,10 Up until now, controversy over the mechanism of this transition has existed. It is not known whether the transition is due to thermal or electronic effects.Recent research favors the electronic model. Observations of the sample stability and the current injected to initiate the MIT support this view.9,10 We have reported a stable MIT induced by a constant applied electric field in highly oriented VO 2 films and revealed the mechanism of the MIT to be based upon electron-electron correlation using a Raman study of the planar devices.11 The transition speed of the MIT in VO 2 films has been reported to be below a picosecond through the use of ultrafast optical techniques.12 If the field-induced MIT occurs quickly enough to apply to high speed devices and shows a reproducible behavior, there are various applications for VO 2 in switching devices such as electrical switches, modulators, and electro-optical devices. Therefore, it is very important to observe the time dependence of the fieldinduced MIT and also to study the transient...

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mentioning

confidence: 99%

Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse

Chae¹,

Kim²,

Youn³

et al. 2005

Physica B: Condensed Matter

122

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“…Hay muchas clases de métodos de preparación de películas delgadas de VOj, tales como evaporación térmica o con irradiación de haz de electrones, sputtering, recubrimientos sol-gel y ablación con irradiación láser pulsada, así como implantación iónica seguida de recocido [8]. En nuestro caso, las muestras frieron depositadas en sustratos de alúmina describiéndose [9] con detalle este método de preparación.…”

Section: Materiales Y Métodosunclassified

“…In this paper, an attention has been paid on the optical properties and its thickness dependence of both virginal and Mo doped VO^for the potential application of intelligent windows. [8] …”

Section: Materiales Y Métodosmentioning

confidence: 99%

Propiedades ópticas de películas de dióxido de vanadio como recubrimiento termocrómico en ventanas

Miyashita

Yamamoto

et al. 2000

Mater. construcc.

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“…Los valores de T^, RR y HW para películas con un alto grado de orientación preparadas por métodos diferentes están en los intervalos 65-68 °C, (2-4)xl0^ y 2-4 °C respectivamente [7,8]. La transmitancia en el infrarrojo cambia desde 50 al 80% durante el efecto MIT en el caso de películas de un espesor aproximado de 200 nm.…”

Section: Propiedades Básicas De Las Películas Delgadas De Vounclassified

“…Para un sistema de un material, el comportamiento electrónico puede darse por una estructura de bandas de los niveles electrónicos que corresponden a una energía windows, fast switch and various kinds of sensors [2][3][4][5] [7,8] determinada que tienen en cuenta todas las propiedades ópticas y eléctricas del material. Debido a que el VO2 es un sistema especial y complejo, hasta el presente no hay una teoría aceptable que pueda dar una visión total y clara de la estructura de bandas energéticas, lo cual ha llevado a una frustración en la comprensión de los fenómenos investigados hasta la fecha por diversos grupos de investigación.…”

Section: Modelo De Banda De Energíaunclassified

Fundamentos de la aplicación de películas delgadas de dióxido de vanadio como posibles componentes de ventanas inteligentes

Wu¹,

Nashiyama²,

Naramoto³

1999

Mater. construcc.

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Fundamentos de la aplicación de películas delgadas de dióxido de vanadio como posibles componentes de ventanas inteligentes Fundamentals of vanadium dioxide thin films as possible components of intelligent windows SUMMARYIn this paper, the research on the vanadium dioxide thin film, which can be used as intelligent windows, is reviewed, including the basic properties of VO.,, energy band structure, model of electronic energy and the origin of metal-to-insulator transition (MIT). Finally, the problems existing in the research and the possibility of application for FO, as an intelligent thermochromic window are briefly discussed. INTRODUCCIÓNDesde la publicación pionera del trabajo experimental de Morín en 1959 [1], quien descubrió el fenómeno de la transición metal -aislador (MIT en la literatura en inglés) y los cambios bruscos de las propiedades ópticas y eléctricas a que da lugar en el dióxido de vanadio (VO2), este material ha sido estudiado con gran intensidad por numerosos investigadores, no solamente por el interés en explorar el mecanismo de dicha L INTRODUCTIONSince the pioneering work of Morín as early as 1959 [IJ, who discovered metal-to-insulator transition (MIT)

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Pulsed laser deposition of oriented VO2 thin films on R-cut sapphire substrates

Abstract: Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films J. Appl. Phys. 113, 043707 (2013); 10.1063/1.4788804 Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates

Cited by 113 publications

References 14 publications

Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse

Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse

Propiedades ópticas de películas de dióxido de vanadio como recubrimiento termocrómico en ventanas

Fundamentos de la aplicación de películas delgadas de dióxido de vanadio como posibles componentes de ventanas inteligentes

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