Pulsed laser deposition of Ga-La-S chalcogenide glass thin film optical waveguides

Youden, K.E.; Grevatt, T.; Eason, R.W.; Rutt, H.N.; Deol, R.S.; Wylangowski, G.

doi:10.1063/1.110730

Cited by 87 publications

(36 citation statements)

References 10 publications

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“…Because these self-written structures are typically long lasting, waveguides in these glasses could be subsequently used to guide light at other wavelengths. Such compound glass materials transmit light in the far infrared from 0.5 to 10 m [19]; thus, long-wavelength devices could be formed using this approach.…”

Section: Discussionmentioning

confidence: 99%

Light-induced self-writing effects in bulk chalcogenide glass

Ljungstrom

Monro

2002

J. Lightwave Technol.

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Abstract-A waveguide can be self-written by a beam of light propagating in a photosensitive material. We report the first observation of self-writing effects in bulk chalcogenide glass and investigate the influences of different writing beam sizes and powers. We observe increases in refractive index of 2.5 10 4 due to illumination at 1047 nm in Ce-doped Ga-La-S. Simulations of the self-writing process show a good agreement with the experimental results. This verifies our numerical model and allows the dynamics of this process to be explored. Using this knowledge, we predict the experimental parameters and conditions required to write waveguides, tapers, and ultimately complex three-dimensional (3-D) structures.

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Section: Discussionmentioning

confidence: 99%

Light-induced self-writing effects in bulk chalcogenide glass

Ljungstrom

Monro

2002

J. Lightwave Technol.

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“…The films are expected to have a composition similar to the bulk glass, a low surface roughness, a reproducible and controlled refractive index and low optical loss. Chalcogenide glass thin films are conventionally prepared by vacuum coating techniques (thermal evaporation or sputtering) or pulsed laser deposition [9,10]. However, less conventional techniques such as spin-coating of glassy films from solution can have certain advantages for realizing large area or thick film deposition while achieving similar optical, physical, and chemical properties of other deposition techniques [11].…”

Section: Introductionmentioning

confidence: 99%

Influence of annealing conditions on the optical and structural properties of spin-coated As_2S_3 chalcogenide glass thin films

Song¹,

Dua²,

Arnold³

2010

Opt. Express

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Spin-coating of chalcogenide glass is a low-cost, scalable method to create optical grade thin films, which are ideal for visible and infrared applications. In this paper, we study the influence of annealing on optical parameters of As 2 S 3 films by examining UV-visible and infrared spectroscopy and correlating the results to changes in the physical properties associated with solvent removal. Evaporation of excess solvent results in a more highly coordinated, denser glass network with higher index and lower absorption. Depending on the annealing temperature and time, index values ranging from n = 2.1 to the bulk value (n = 2.4) can be obtained, enabling a pathway to materials optimization. 275-284 (1987). 19. S. Shtutina, M. Klebanov, S. R. V. Lyubin, and V. Volterra, "Photoinduced phenomena in spin-coated vitreous As2S3 and AsSe films," Thin Solid Films 261(1-2), 263-265 (1995). 20. J. Tauc, "Absorption edge and internal electric fields in amorphous semiconductors," Mater. Res. Bull. 5(8), 721-729 (1970). 21. R. Swanepoel, "Determination of the thickness and optical constans of amorphous silicon," J. Phys. E 16(12), 1214-1222 (1983). 22. E. Marquez, J. Ramirez-Malo, P. Villarest, R. Jimenez-Garay, P. J. S. Ewen, and A. E. Owen, "Calculation of the thickness and optical constants of amorphous arsenic sulfide films from their transmission spectra," J. Phys. D Appl. Phys. 25(3), 535-541 (1992). 23. S. Wemple, and M. DiDomenico, "Behavior of electronic dielectric constant in covalent and ionic materials,"Phys. Rev. B 3(4), 1338-1351 (1971). 24. S. Wemple, "Refractive-index behavior of amorphous semiconductors and glasses," Phys. Rev. B 7(8), 3767-3777 (1973).

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“…'Talysurf' stylus measurements taken on photomodified samples (figure 4) show that thickness changes are below 20nm in an -7OOnm thick film; the sharp structure to the left in figure 4 is a scratch to identify the region, the photomodified area being within the plateau region. Based on previous results [4] the index change in this region was probably -l%, so photodensitication cannot yet be excluded but it would not be serious for device use. A further difference as compared to the non GLS chalcogenide films is that a photobleaching effect is apparent to the eye in GLS whereas arsenic films photodarken.…”

Section: Resultsmentioning

confidence: 99%

“…Laser action to wavelengths approaching 5um may be feasible in high quality films. An unusual property of the material is that the refractive index can be substantially and permanently modified by exposure to illumination above the band gap, typically at 0.5145pm wavelength or shorter [3,4]. …”

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confidence: 99%

Laser Ablation Deposition of Ga2S3-La2S3 Glass Films

1995

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Gallium -lanthanum sulphide glasses (GLS) show wide range transparency and low non radiative relaxation rates for dopant ions such as Ho", EI' etc. They also show permanent photomodification of the refractive index under visible illumination. We report laser ablation deposition of these glasses and preliminary results on film stoichiometry and deposition rate as a function of excimer laser fluence. The sulphur to metal and G&a ratios are found to have marked fluence dependencies. The films show considerably more Urbach tail absorption than bulk material. A novel method has been developed for mapping the permanent photomodifled index. INTRODUCTJONGallium-lanthanum sulphide (Ga&La$,) ('GLS') glasses [l] have a range of novel optoelectronic applications. The material is transparent from -0.65um to -lOurn, covering the important near infrared telecommunications and mid infrared 'fingerprint' spectral regions. The lanthanum content ensures very high solubility for other rare earth dopant ions such as Er3',Ho",Pr3',Nd" [2] etc which can be used as active laser or optical amplifier species. The low phonon energy of GLS glass gives rise to low non radiative relaxation rates, which opens the possibility of operating lasers in this host material in the mid infrared. Laser action to wavelengths approaching 5um may be feasible in high quality films. An unusual property of the material is that the refractive index can be substantially and permanently modified by exposure to illumination above the band gap, typically at 0.5145pm wavelength or shorter [3,4]. FILM DEPOSITION Target fabricationThe use of these large targets ensures consistency of target material over mAblation targets are manufactured as gallium lanthanum sulphide glass disks of typically 40mm diameter by 1Omm thick. any ablation experiments and freedom from target thermal damage and cracking. Gallium sulphide (70% molar) and lanthanum sulphide (30% molar) are weighed out under dry nitrogen into a vitreous carbon crucible pre placed in a silica ampoule. Particular care is taken with the source of the sulphide (Merck) to minimise contamination with oxysulphides. The silica ampoule is evacuated and heated to 1200C for two hours and then water quenched. The glass disc is clear orange/yellow, with some superficial bubbles where gas adhered to the crucible/glass interface.The discs release easily from the crucible and there is no evidence of attack. The targets are visually homogeneous and show visible and IR spectra typical of GLS glass. Energy dispersive X ray analysis shows the targets to be homogeneous and stoichiometric to within experimental error. The disc is ground down to a flat surface, cleaned, and mounted in a cup designed to provide a surface to radiate the absorbed power load and minimise conduction to the in-vacuum stepper motor drive.

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Pulsed laser deposition of Ga-La-S chalcogenide glass thin film optical waveguides

Cited by 87 publications

References 10 publications

Light-induced self-writing effects in bulk chalcogenide glass

Light-induced self-writing effects in bulk chalcogenide glass

Influence of annealing conditions on the optical and structural properties of spin-coated As_2S_3 chalcogenide glass thin films

Laser Ablation Deposition of Ga2S3-La2S3 Glass Films

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