Pulsed laser deposition of epitaxial Al-doped ZnO film on sapphire with GaN buffer layer

Improvement of stoichiometry in (ZnO)1−x(GaN)x thin films grown by laser ablation

“…Further, it is clearly observed that the PL of (Zn 1−x Ga x )(O 1−x N x ) is not affected by the PL of GaN. Normally UV emission of GaN appears at 3.43 eV [18] and no trace of such emission has been observed in our PL spectrum of (…”

Growth of Heteroepitaxial ZnO Thin Films on GaN‐Buffered Al2O3 (0001) Substrates by Low‐Temperature Hydrothermal Synthesis at 90 °C

“…2 %) with room temperature lattice parameters of a Z = 0.325 nm, c Z = 0.521 nm and a G = 0.319 nm, c G = 0.519 nm, one would expect that ZnO epitaxial thin films on GaN would produce superior properties. Epitaxial ZnO films have been grown on GaN substrates using different vapor-phase methods including metal-organic chemical vapor deposition (MOCVD), [18,19] metal-organic vapor-phase epitaxy, [20][21][22][23][24] pulsed laser deposition (PLD), [25][26][27] and molecular beam epitaxy (MBE). [28][29][30][31] Recently it was shown that lateral epitaxial overgrowth (LEO) of ZnO films on (111) spinel substrates could be accomplished in water at 90°C.…”

Effect of oxygen pressure on preferential orientation, microstructure and functional properties of Bi1.5MgNb1.5O7 thin films prepared by pulsed laser deposition

“…However, the observed decrease in the diffraction peak intensity at higher value of oxygen pressure could be due to the reduction of plume size. This leads to reduction of the adhesion coefficient for the source element that arrives at the substrate and formation of defects in thin films [19]. The BMN thin films would not be well crystallized, thereby degrading the crystal quality of film as the oxygen pressure increases beyond an optimal pressure.…”