Improvement of stoichiometry in (ZnO)1−x(GaN)x thin films grown by laser ablation

Properties of InAs co‐doped ZnO thin films prepared by pulsed laser deposition

“…For the co-www.crt-journal.org doped ZnO films, the RMS roughness decreased to about 5 nm, which suggests that the stoichiometry in ZnO has been improved by co-doping. The behaviour of improved surface morphology due to co-doping has already been observed by Gopalakrishnan et al [18]. It is seen that no segregation of dopants has been observed in the grain boundaries of the doped films.…”

Annealing effects of co-doping with Al and Sb on structure and optical–electrical properties of the ZnO thin films

“…ZnO possesses a wide direct band gap energy of 3.37 eV and a larger exciton binding energy of 60 meV [1][2][3], which is a very attractive material for optoelectronic applications [4]. ZnO thin films have been prepared by various methods such as RF magnetron sputtering [5], molecular beam epitaxy (MBE) [6], metal organic chemical vapor deposition (MOCVD) [7], pulsed laser deposition (PLD) [8], spray pyrolysis [9] and the sol-gel process [10].…”

Photo-Luminescence Properties of Novel ZnO Nano-Phosphors

“…In the last decade, nano-scale II VI − semiconductors have attracted increasing attention because of their unique electronics, optics and photonics properties [1][2][3][4]. Zinc oxide ( ZnO ) has a wide band-gap energy (3.37 eV) and a larger exciton binding energy (60 meV) [5][6][7] that possesses high surface area, low toxicity, high transmittance in visible region as well as good electrical, electrochemical and structural properties [8][9] which is suitable for potential application in optoelectronic devices, catalyst, gas sensors, sun screen or other medical applications [10][11][12][13][14][15][16][17][18][19]. ZnO is transparent to visible light and can be made highly conductive by doping.…”