Abstract:InAs co-doped ZnO films were grown on sapphire substrates by pulsed laser deposition. The grown films have been characterized using X-ray diffraction (XRD), Hall effect measurements, Atomic force microscope (AFM) and Field emission scanning electron microscope (FESEM) in order to investigate the structural, electrical, morphological and elemental properties of the films respectively. XRD analysis showed that all the films were highly orientated along the c-axis. It was observed from Hall effect measurements th… Show more
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