Pulsed laser deposition of Cu2ZnSn(SxSe1−x)4 thin film solar cells using quaternary oxide target prepared by combustion method

Jin, Xin; Chen, Yuan; Zhang, Lijian; Jiang, Guoshun; Liu, Weifeng; Chang, Zhu

doi:10.1016/j.solmat.2016.06.022

Cited by 10 publications

(8 citation statements)

References 53 publications

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“…The SEM image in Fig. 8 was taken about 2-3 mm from the solar cell area and, with a conservative estimate on the expected thickness gradient, the CZTS layer in the solar cell does not exceed a thickness of 450 nm, which is among the lowest values reported for high efficiency CZTS devices [15,31]. Unfortunately, we were not able to obtain a higher efficiency by just increasing the CZTS thickness.…”

Section: Solar Cell Characterization 321 Morphology and Thicknessmentioning

confidence: 93%

“…Among vacuum techniques, pulsed laser deposition (PLD) was firstly studied in 2007-08 by Moriya et al. [13,14], who demonstrated a power conversion efficiency up to 1.74% with a two stage approach consisting of room temperature deposition of the precursors followed by high temperature annealing in a mixture of N 2 and H 2 S. With a similar approach, but using a quaternary oxide target, a power conversion efficiency of 4.94% was claimed very recently by Jin et al [15] Pulsed laser deposition is a non-equilibrium technique that enables the fabrication of high quality thin films with complex stoichiometry, particularly oxides, nitrides, and amorphous materials [16][17][18]. Briefly, a pulsed UV laser beam is focused onto a solid target and laser ablation occurs, which result in highly non-thermal removal of the target material.…”

Section: Introductionmentioning

confidence: 99%

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Ultra-thin Cu2ZnSnS4 solar cell by pulsed laser deposition

Cazzaniga

Crovetto

Yan

et al. 2017

Solar Energy Materials and Solar Cells

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We report on the fabrication of a 5.2% efficiency Cu 2 ZnSnS 4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed. At the optimal laser fluence, amorphous CZTS precursors with optimal stoichiometry for solar cells are deposited from a single target. Such precursors do not result in detectable segregation of secondary phases after the subsequent annealing step. In the analysis of the solar cell device, we focus on the effects of the finite thickness of the absorber layer. Depletion region width, carrier diffusion length, and optical losses due to incomplete light absorption and back contact reflection are quantified. We conclude that material-and junction quality is comparable to that of thicker state-of-the-art CZTS devices, even though the efficiency is lower due to optical losses.

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Section: Solar Cell Characterization 321 Morphology and Thicknessmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Ultra-thin Cu2ZnSnS4 solar cell by pulsed laser deposition

Cazzaniga

Crovetto

Yan

et al. 2017

Solar Energy Materials and Solar Cells

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“…The kesterite‐type phases of Cu 2 ZnSnS 4 (CZTS), Cu 2 ZnSnSe 4 (CZTSe), and mixtures of these (here called CZTSSe) have attracted attention from the scientific and industrial community as potential earth‐abundant and inexpensive solar cell materials . Much progress has been made on understanding how the synthesis affect their properties such as material stability and conductivity, and the synthesis affects device performance . The optical properties of CZTS and CZTSe compounds have been studying extensively .…”

Section: Introductionmentioning

confidence: 99%

“…The optical properties of CZTS and CZTSe compounds have been studying extensively . There has also been a number of computational and experimental studies addressing structural, electronic, and optical properties of their mixtures, that is, CZTSSe. The highest efficiency attained so far for CZTSSe is 12.6%, which was achieved by partially substituting S anions with Se forming a band‐gap grading through the depth of the film with optical gaps ranging from 1.1 to 1.5 eV.…”

Section: Introductionmentioning

confidence: 99%

Optical Properties of Cu₂ZnSn(S_xSe_1‐x)₄ by First‐Principles Calculations

Zamulko

Berland

Persson

2018

Physica Status Solidi (a)

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Structural, electronic, and optical properties of Cu 2 ZnSn(S x Se 1-x ) 4 semiconductors are studied theoretically for different concentration of S and Se anions. The optical properties are calculated at three levels of theory, in the generalized gradient approximation (GGA), meta-GGA, and with a hybrid functional. The GGA and meta-GGA calculations are corrected with an onsite Coulomb U d term. Lattice constants, dielectric constants, and band-gaps are found to vary almost linearly with the concentration of S. The authors also show that a dense sampling of the Brillouin zone is required to accurately account for the shape of the dielectric function, which is hard to attain with hybrid functionals. This issue is resolved with a recently developed k Áp based interpolation scheme, which allows us to compare results of the hybrid functional calculations on an equal footing with the GGA and meta-GGA results. We find that the hybrid functionals provide the overall best agreement with the experimental dielectric function.

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“…This advantage is shared by energy-enhanced deposition technique like PLD and sputtering. (ii) PLD with oxide targets may also greatly ensure a homogeneous chemical composition in the deposited film [91]. However, several issues significantly hurdle the production of high-efficiency solar cells based on absorber layer grown by PLD:…”

Section: Pulsed Laser Depositionmentioning

confidence: 99%

Physical routes for the synthesis of kesterite

et al. 2019

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This paper provides an overview of the physical vapor technologies used to synthesize Cu 2 ZnSn(S,Se) 4 thin films as absorber layers for photovoltaic applications. Through the years, CZT(S,Se) thin films have been fabricated using sequential stacking or co-sputtering of precursors as well as using sequential or co-evaporation of elemental sources, leading to high-efficient solar cells. In addition, pulsed laser deposition of composite targets and monograin growth by the molten salt method were developed as alternative methods for kesterite layers deposition. This review presents the growing increase of the kesterite-based solar cell efficiencies achieved over the recent years. A historical description of the main issues limiting this efficiency and of the experimental pathways designed to prevent or limit these issues is provided and discussed as well. A final section is dedicated to the description of promising process steps aiming at further improvements of solar cell efficiency, such as alkali doping and bandgap grading. intensive research on Cu 2 ZnSn(S,Se) 4 (CZT(S,Se)) kesterite compounds as CRM-free absorber layers for PV applications is essential. This article aims at establishing a complete overview of the physical routes used for the synthesis of kesterite thin films as absorber layers in solar cells. The following sections are devoted to that objective and will take on the main issues which have been raised so far as well as how the processes have evolved through the years to meet the requirements of the market. Some major advancements in terms of deposition or post-deposition treatments are introduced. Advantages and drawbacks of each of the physical methods presented in this review are described in detail and compared to other physical or chemical synthesis routes. Physical routes: status overviewWe performed an extensive identification of the common processes and methods used for the synthesis of kesterite thin films or for the design of solar cell devices. In order to avoid unnecessary repetitions along this paper, this section first explains these well-known and commonly used experimental processes and methods. Historically, based on the similarities between kesterite and chalcopyrite compounds, the standard device structure adopted for Cu(In,Ga)(S,Se) 2 (CIGSSe) was directly extended to CZTSSe, by simply replacing the CIGSSe absorber layer with a p-type CZTSSe thin film. CZTSSe solar cells are then typically produced using a soda-lime glass (SLG) substrate coated with a sputtered Mo layer acting as rear metallic contact. Typical sputter-deposited Mo layer thickness is around 500 nm up to 1 μm [12]. The kesterite absorber is then deposited onto the Mo layer.The fabrication of this absorber consists in the deposition of a precursor layer via a physical or a chemical route, which is then annealed in a reactive atmosphere containing either S (sulfurization) or Se (selenization). As a common result of the reactive annealing, a thin Mo(S,Se) 2 layer is naturally formed at the CZTSSe/Mo interface, betw...

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Pulsed laser deposition of Cu2ZnSn(SxSe1−x)4 thin film solar cells using quaternary oxide target prepared by combustion method

Cited by 10 publications

References 53 publications

Ultra-thin Cu2ZnSnS4 solar cell by pulsed laser deposition

Ultra-thin Cu2ZnSnS4 solar cell by pulsed laser deposition

Optical Properties of Cu₂ZnSn(S_xSe_1‐x)₄ by First‐Principles Calculations

Physical routes for the synthesis of kesterite

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Pulsed laser deposition of Cu2ZnSn(SxSe1−x)4 thin film solar cells using quaternary oxide target prepared by combustion method

Cited by 10 publications

References 53 publications

Ultra-thin Cu2ZnSnS4 solar cell by pulsed laser deposition

Ultra-thin Cu2ZnSnS4 solar cell by pulsed laser deposition

Optical Properties of Cu2ZnSn(SxSe1‐x)4 by First‐Principles Calculations

Physical routes for the synthesis of kesterite

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Optical Properties of Cu₂ZnSn(S_xSe_1‐x)₄ by First‐Principles Calculations