Pulsed Laser Deposition of Boron Doped Si₇₀Ge₃₀

Abstract

The main objective of this work is to investigate the possibility of combining pulsed laser deposition (PLD) and pulsed laser annealing to realize p-type Si 1-x Ge x thin films suitable for post-processing MEMS on top of standard pre-fabricated driving electronics. The main advantage of this approach is that the substrate is kept at a CMOS backend compatible temperature throughout the deposition and thus the MEMS integration process will have no thermal impact on the underlying electronics. In addition, it is demonstrated that PLD Si 1-x Ge x has good adhesion to SiO 2 . Therefore, there is no need for a silicon nucleation in contrast to LPCVD and PECVD. Furthermore, this technique is much more economical than CVD as it does not use expensive gas precursors such as germane and silane.