Abstract:The main objective of this work is to investigate the possibility of combining pulsed laser deposition (PLD) and pulsed laser annealing to realize p-type Si 1-x Ge x thin films suitable for post-processing MEMS on top of standard pre-fabricated driving electronics. The main advantage of this approach is that the substrate is kept at a CMOS backend compatible temperature throughout the deposition and thus the MEMS integration process will have no thermal impact on the underlying electronics. In addition, it is … Show more
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