2007
DOI: 10.1109/jmems.2006.886030
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Characterization of Polycrystalline Silicon-Germanium Film Deposition for Modularly Integrated MEMS Applications

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Cited by 35 publications
(14 citation statements)
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“…A hot-wall horizontal LPCVD reactor (described in details in Ref. [6]) was used to deposit in-situ boron doped poly-SiGe films. Poly-SiGe films with thickness of 1.5 µm to 4.5 µm were deposited onto silicon wafer substrates coated with 2 µm-thick sacrificial oxide.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…A hot-wall horizontal LPCVD reactor (described in details in Ref. [6]) was used to deposit in-situ boron doped poly-SiGe films. Poly-SiGe films with thickness of 1.5 µm to 4.5 µm were deposited onto silicon wafer substrates coated with 2 µm-thick sacrificial oxide.…”
Section: Methodsmentioning
confidence: 99%
“…All of the films have roughly 60% germanium content and boron concentration on the order of 1×10 20 atom/cm 3 . Based on results of previous experiments [6] and the thermal budget constraint imposed by advanced CMOS electronics [7], a deposition temperature of 410°C was used for the majority of this work. Table I summarizes the film deposition conditions.…”
Section: Methodsmentioning
confidence: 99%
“…While the current design necessitates the W electrode to always be smaller than the SiGe electrode to account for the source/drain regions, the area difference can be minimized in an optimally designed relay. (7,9) Figure 4 shows how the switching voltages shift with applied body bias. Ideally, actuation would depend only on the voltage difference between the gate and the body (V GB ), so V PI and V RL should shift the same amount as the applied VB (i.e.…”
Section: International Journal Of Computer Applications (0975 -8887)mentioning
confidence: 99%
“…A detailed overview of the effect of different process parameters on the stress and strain gradient was made by Low et al in [59][60][61]. Also, increasing the diborane flow enhances the growth rate [62] as the boron atoms act as adsorption sites for both silicon and germanium atoms [63].…”
Section: Poly-sige Deposition Technologymentioning
confidence: 99%