Characterization of Polycrystalline Silicon-Germanium Film Deposition for Modularly Integrated MEMS Applications

Low, Carrie W.; Liu, Tsu‐Jae King; Howe, Roger T.

doi:10.1109/jmems.2006.886030

Cited by 35 publications

(14 citation statements)

References 22 publications

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“…A hot-wall horizontal LPCVD reactor (described in details in Ref. [6]) was used to deposit in-situ boron doped poly-SiGe films. Poly-SiGe films with thickness of 1.5 µm to 4.5 µm were deposited onto silicon wafer substrates coated with 2 µm-thick sacrificial oxide.…”

Section: Methodsmentioning

confidence: 99%

“…All of the films have roughly 60% germanium content and boron concentration on the order of 1×10 20 atom/cm 3 . Based on results of previous experiments [6] and the thermal budget constraint imposed by advanced CMOS electronics [7], a deposition temperature of 410°C was used for the majority of this work. Table I summarizes the film deposition conditions.…”

Section: Methodsmentioning

confidence: 99%

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Study of Poly-SiGe Structural Properties for Modularly Integrated MEMS

Low

Liu²,

Howe³

2006

ECS Trans.

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Approaches to improve the strain gradient of low-temperaturedeposited LPCVD polycrystalline silicon-germanium (poly-SiGe) for MEMS inertial sensor applications are investigated. Correlation between the strain gradient and film microstructure is found, and the effects of film deposition conditions on film microstructure are studied. Boron-doped poly-SiGe films generally have vertically oriented grains, either conical or columnar in shape. Films with small strain gradient usually have columnar grain structure with low defect density. The best strain gradient achieved is 1.1×10-6 µm-1 for a 3.5 µm thick film deposited at 410°C, with a worst-case variation across a 150 mm-diameter wafer of 1.6×10-5 µm-1. The uniformity of films deposited in a batch LPCVD reactor can be improved by increasing the deposited film thickness, using a proper seeding layer, and/or depositing the film in muliple layers. Post-deposition annealing and argon implantation can be used to tune the strain gradient so that lower strain gradient can be achieved with proper deposition and annealing/implantation combinations.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Study of Poly-SiGe Structural Properties for Modularly Integrated MEMS

Low

Liu²,

Howe³

2006

ECS Trans.

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“…While the current design necessitates the W electrode to always be smaller than the SiGe electrode to account for the source/drain regions, the area difference can be minimized in an optimally designed relay. (7,9) Figure 4 shows how the switching voltages shift with applied body bias. Ideally, actuation would depend only on the voltage difference between the gate and the body (V GB ), so V PI and V RL should shift the same amount as the applied VB (i.e.…”

Section: International Journal Of Computer Applications (0975 -8887)mentioning

confidence: 99%

Study of Parasitic Effects of 1st Generation in 4T Relay Design

Pande¹,

Gupta²

2016

IJCA

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“…A detailed overview of the effect of different process parameters on the stress and strain gradient was made by Low et al in [59][60][61]. Also, increasing the diborane flow enhances the growth rate [62] as the boron atoms act as adsorption sites for both silicon and germanium atoms [63].…”

Section: Poly-sige Deposition Technologymentioning

confidence: 99%