Pulsed laser deposition growth of Fe3O4 on III–V semiconductors for spin injection

Abstract

We report on the growth of thin layers of Fe 3 O 4 on GaAs and InAs by pulsed laser deposition. It is found that Fe 3 O 4 grows epitaxially on InAs at a temperature of 350°C. X-ray photoelecton spectroscopy ͑XPS͒ studies of the interface show little if any interface reaction resulting in a clean epitaxial interface. In contrast, Fe 3 O 4 grows in columnar fashion on GaAs, oriented with respect to the growth direction but with random orientation in the plane of the substrate. In this case XPS analysis showed much more evidence of interface reactions, which may contribute to the random-in-plane growth.

Magnetic anisotropies in epitaxial Fe3O4/GaAs(100) patterned structures

“…[18][19][20] Moreover, such a magnetic anisotropy system does not exist in epitaxial Fe 3 O 4 thin films prepared by other techniques. [21][22][23] On the other hand, from the charge transport measurements in our high-quality epitaxial Fe 3 O 4 film, a resistivity of about 5 × 10 −3 Ω cm has been demonstrated, which is very close to that of bulk single crystal [24][25][26] and much lower than those of the commonly reported Fe 3 O 4 thin. films.…”

The impact on the magnetic field growth of half-metallic Fe3O4 thin films

“…Various techniques have been used to fabricate singlecrystalline Fe 3 O 4 films, such as molecular-beam epitaxy (MBE) [13,14], reactive ion beam deposition (IBD) [15,16] from an Fe target with Ar-O 2 mixture gas flow, pulsed laser deposition (PLD) from an oxide target [17,18], RF magnetron sputtering with an external inductively coupled RF source [19], and so on. The researches are focusing on the magnetic and structural properties for the singlecrystalline Fe 3 O 4 .…”

Probing the interface ofFe3O4/GaAsthin films by hard x-ray photoelectron spectroscopy

“…Recent interest has been directed at the use of semiconducting substrates. [10][11][12][13][14][15] However, there are only sparse experimental reports 10,13 on interface chemistry and interface reactions, although based on thermodynamic considerations such interfaces might not be stable. 16 In this work, we examine this problem and investigate the chemical nature of Fe 3 O 4 films grown on GaAs͑100͒ substrates and their respective interfaces.…”