Pulsed laser deposition and ferroelectric characterization of bismuth titanate films

Abstract

Stoichiometric films of bismuth titanate, Bi4Ti3O12, have been grown for the first time by the technique of pulsed excimer laser deposition. Ferroelectric films were obtained at temperatures as low as 500 °C on Si(100), MgO(110), and Pt-coated Si(100) substrates. Hysteresis measurements using a Pt-coated Si sample yielded a saturation polarization value of about 28 μC/cm2, consistent with a randomly oriented titanate film structure. A preliminary metal-insulator-semiconductor sandwich structure of the form Bi4Ti3O12-CaF2(100 Å)-Si was grown and used to examine polarization induced memory switching effects.

Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition technique

“…The low coercive field along the c-axis makes bismuth titanate an attractive gate electrode in a ferroelectric FET memory device of nondestructive readout ͑NDRO͒ mode. 7 Ferroelectric thin films have attracted much attention for memory devices. However, there are still some problems that have to be solved prior to the realization of practical nonvolatile memory devices that utilize switching of ferroelectric polarization.…”

Structural and electrical characteristics of Bi3.5Sm0.5Ti3O12 thin films on Si (100)

“…Metalferroelectric-semiconductor (MFS) hetero-structure with BTO as a gate electrode material for ferroelectric field effect transistor (FFET) in a non-destructive readout (NDRO) mode has been demonstrated [5]. However, BTO films show fatigue and unexpectedly high leakage electric current, which have appeared as obstacles for further technological adoption [6,7].…”

“…Thin films of BTO have already been prepared by RF sputtering [2], metalorganic chemical vapor deposition [11], pulsed laser deposition [5], and electron cyclotron resonance plasma sputtering [12], etc. Among the various techniques available for the fabrication of BTO thin films, metalorganic decomposition (MOD) method employed in this study offers the advantages of precise control of composition and homogeneity along with the ability to coat a large film on a complex substrate.…”

Structural and electrical properties of Sm-doped bismuth titanate thin films on Si (100) by metalorganic decomposition

“…As a typical ferroelectric material, BTO has become a key candidate for memory storage capacitor, optical display and electrooptical devices owing to their promising ferroelectric and electrooptic properties [2][3][4][5]. Metal -ferroelectric -semiconductor (MFS) heterostructure with BTO as a gate electrode material for ferroelectric field effect transistor (FFET) in a nondestructive readout mode has been demonstrated [6]. However, BTO films show fatigue and unexpectedly high leakage electric current, which have appeared as obstacles for further technological adoption [7,8].…”