2012
DOI: 10.1016/j.mssp.2012.03.009
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Pulsed laser deposition and characterization of La1−xSrxMnO3

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Cited by 4 publications
(2 citation statements)
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“…The line shape and the values of the dielectric function are consistent with those of LSMO deposited on STO as reported by Veis et al, [27] but they differ significantly from the dielectric function of LSMO films grown on Si(100) reported by Calderón et al [28] This discrepancy can be explained by the fact that Calderón et al annealed the LSMO films at 900 C. This may have caused the growth of SiO x and an interdiffusion between silicon oxide and LSMO, which were not accounted for in their calculation of the dielectric function.…”
Section: Variable-angle Spectroscopic Ellipsometry (Vase)supporting
confidence: 87%
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“…The line shape and the values of the dielectric function are consistent with those of LSMO deposited on STO as reported by Veis et al, [27] but they differ significantly from the dielectric function of LSMO films grown on Si(100) reported by Calderón et al [28] This discrepancy can be explained by the fact that Calderón et al annealed the LSMO films at 900 C. This may have caused the growth of SiO x and an interdiffusion between silicon oxide and LSMO, which were not accounted for in their calculation of the dielectric function.…”
Section: Variable-angle Spectroscopic Ellipsometry (Vase)supporting
confidence: 87%
“…The dielectric functions of the layers were assumed to be optically isotropic due to their amorphous structure. The model took into account the dielectric functions of silicon from the study by Veis et al [ 27 ] (with a thickness of 1 mm) and of silicon oxide from the study by Calderon et al [ 28 ] (with a thickness of 2 nm). A general oscillator layer with variable thickness was applied to account for the LSMO layer.…”
Section: Resultsmentioning
confidence: 99%