Pulsed laser deposited nanostructured InN thin films as field emitters

InN nanotips as excellent field emitters

“…In particular, its unusual surface properties and inherently heavily doped nature can, in fact, be exploited for vacuum microelectronic devices. Despite the difficulty in sample preparation, [12][13][14][15] field emission ͑FE͒ of electrons has been observed in single crystalline and polycrystalline nanostructural forms of InN thin films grown on insulating substrates. [13][14][15] In this work, we have produced well-aligned and unidirectional single crystalline InN nanotips as a field emitting device fabricated on silicon substrates, which shows excellent FE properties with the threshold field as low as 0.9 V / m based on the criterion of an emission current density of 1 A / cm 2 .…”