Pulsed kW-peak power and integrated all fiber MOPA single-frequency source at 2050nm

Lucas, E.; Canat, Guillaume; Lombard, Laurent; Jaouën, Yves; Bordais, Sylvain

doi:10.1117/12.2052284

Cited by 2 publications

(2 citation statements)

References 9 publications

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“…Optical measurements were performed on polished and annealed AGGS samples (10 × 10 × 5 mm 3 ). The optical transmission was measured at 2.05 μm using a thulium doped fiber cw laser (20 Khz, 100–400 ns, peak power 1 kW) and at 1.064 μm using a Nd:YAG laser. These measurements indicated an absorption coefficient of 0.04 cm –1 at 2.05 μm and 0.12 cm –1 at 1.064 μm.…”

Section: Results and Discussionmentioning

confidence: 99%

Control of Melt Decomposition for the Growth of High Quality AgGaGeS₄ Single Crystals for Mid-IR Laser Applications

Rame

Viana

Clément

et al. 2014

Crystal Growth & Design

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AgGaGeS 4 (AGGS) is a promising nonlinear crystal for mid-IR laser applications which could fulfill the lack of material able to convert a 1.064 µm pump signal (Nd:YAG laser) into wavelengths higher than 4 µm up to 11 µm. The processing steps of this material are presented in this study. The key issue of AGGS crystal processing is the control of decomposition at high temperature due to the high volatility of GeS 2. This study present the solutions to obtain high quality single crystal. AGGS crystals with 28 mm diameter and 70 mm length were grown by the Bridgman-Stockbarger method. The crystals have good homogeneity and high transparency in the 0.5-11.5 µm spectral range making it suitable for optical experiments. The influence of GeS 2 volatility on melt stoichiometry during the AgGaGeS 4 processing is outlined and solutions to improve the crystals quality are presented.

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Section: Results and Discussionmentioning

confidence: 99%

Control of Melt Decomposition for the Growth of High Quality AgGaGeS₄ Single Crystals for Mid-IR Laser Applications

Rame

Viana

Clément

et al. 2014

Crystal Growth & Design

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show abstract

“…Fresnel losses at the air/crystal interfaces were taken into account using Sellmeier equations for the refractive indexes provided by Das et al [53]. In addition, the optical transmission was measured at 1.064 µm using a Nd:YAG laser and at 2.05 µm using a thulium doped fiber CW laser (20 kHz, 100-400 ns, peak power 1 kW [54]) for comparison.…”

Section: Optical Characterizationsmentioning

confidence: 99%

Homogeneity characterization in AgGaGeS4, a single crystal for nonlinear mid-IR laser applications

Rame

Petit

Boivin

et al. 2020

Journal of Crystal Growth

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This is a PDF file of an article that has undergone enhancements after acceptance, such as the addition of a cover page and metadata, and formatting for readability, but it is not yet the definitive version of record. This version will undergo additional copyediting, typesetting and review before it is published in its final form, but we are providing this version to give early visibility of the article. Please note that, during the production process, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.

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Pulsed kW-peak power and integrated all fiber MOPA single-frequency source at 2050nm

Cited by 2 publications

References 9 publications

Control of Melt Decomposition for the Growth of High Quality AgGaGeS₄ Single Crystals for Mid-IR Laser Applications

Control of Melt Decomposition for the Growth of High Quality AgGaGeS₄ Single Crystals for Mid-IR Laser Applications

Homogeneity characterization in AgGaGeS4, a single crystal for nonlinear mid-IR laser applications

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Pulsed kW-peak power and integrated all fiber MOPA single-frequency source at 2050nm

Cited by 2 publications

References 9 publications

Control of Melt Decomposition for the Growth of High Quality AgGaGeS4 Single Crystals for Mid-IR Laser Applications

Control of Melt Decomposition for the Growth of High Quality AgGaGeS4 Single Crystals for Mid-IR Laser Applications

Homogeneity characterization in AgGaGeS4, a single crystal for nonlinear mid-IR laser applications

Contact Info

Product

Resources

About

Control of Melt Decomposition for the Growth of High Quality AgGaGeS₄ Single Crystals for Mid-IR Laser Applications

Control of Melt Decomposition for the Growth of High Quality AgGaGeS₄ Single Crystals for Mid-IR Laser Applications