Homogeneity characterization in AgGaGeS4, a single crystal for nonlinear mid-IR laser applications

Abstract

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Non-stoichiometry and point native defects in non-oxide non-linear optical large single crystals: advantages and problems

“…In ref. 34, crystals were grown by the BS method at optimal conditions (stoichiometric polycrystalline material, minimizing free space under melt, isopiestic annealing with polycrystalline material), but yet they had α = 0.1 cm −1 in the 1–8 μm range. To explain this lower crystal quality, a direct chemical analysis determining the non-stoichiometry and the phase purity of AGGS crystals was performed.…”

“…The authors explained this inhomogeneity via the limited mass transport of species to the liquid–solid boundary in the non-stirred melt and trapping of species by the growing crystals. 34 Notice that such detailed and precise characterization of as-grown crystals served as the basis for understanding the melt state during crystallization.…”

Optical and defect properties of mid-IR laser crystal Dy3+: PbGa2S4: a DFT and XPS study

“…These deviations could induce the formation of high-density intrinsic defects and result in the serious defect absorption of as-grown crystals. The optical quality of chalcogenide crystals, such as AgGaS 2 , [11][12][13][14] AgGaGeS 4 , [14][15][16] AgGaSe 2 , 17,18 and LiInS 2 , 19,20 varied with the component ratio in the process of crystal preparation. The same crystal even demonstrated different colors.…”