Pulsed field induced magnetization switching in (Ga,Mn)As

Abstract

Up to now, all high frequency switching experiments on ferromagnetic semiconductors have involved light induced switching, which is not compatible with integrated circuits. We employed all-electrical techniques to study the response of (Ga,Mn)As to a magnetic field pulse. A field pulse was applied through a coplanar waveguide and the magnetization was read out by anisotropic magnetoresistance. We demonstrated that full magnetization switching by domain wall nucleation and propagation can be triggered by pulses as short as 800ps, combining the effect of the pulsed field and a heat-induced reduction of the coercive field.

All-Wurtzite (In,Ga)As-(Ga,Mn)As Core–Shell Nanowires Grown by Molecular Beam Epitaxy

“…pattern for [11][12][13][14][15][16][17][18][19][20] zone axis fits well to the experimental image (see Fig. 3d).…”

“…The wide range of new physical phenomena and functionalities have been discovered in FMS due to the possibility of tuning their magnetic properties by the methods routinely used for modifying the electronic properties of semiconductors, such as application of electric fields by electrostatic gates, 6,7,8,9 pressure 10 or irradiation with light. 11,12,13 In this context using quasi one-dimensional (1D) geometry of nanowires is advantageous since it enhances the possibility of controlling the electronic properties up to the ultimate level of the single carrier. 14,15,16 Since (Ga,Mn)As layers with Mn content exceeding 1%, which is essential for the ferromagnetic phase transition to occur, 1 can only be grown at low temperatures, they contain substantial amount of defects.…”

Spin dynamics in semiconductors

“…As the ferromagnetic order in III(Mn)-V magnetic semiconductors originates from the carrier mediated Mn spin-spin interactions via the strong s(p)-d exchange interactions [114], the manipulation of carriers would lead to efficient control over the magnetization. The efficient manipulation of magnetization via optical and electrical [809][810][811][812] means has been realized.…”

Study of structural, optical and magnetic properties of cobalt doped ZnO nanorods

“…Although it is easy to prepare such materials, it is difficult to make p-or n-type II-VI based DMS, which make these materials less attractive for applications. Aer discovery of the hole induced ferromagnetic order in p-type InMnAs 10 and GaMnAs, 11 a lot of studies have been carried out on III-V based DMS system [12][13][14][15][16][17] but unfortunately room temperature ferromagnetism could not be observed in GaMnAs. Since then a large number of efforts has been carried out to nd the possibility of room temperature ferromagnetism in III-V based DMS such as GaN, GaSb, InAs [18][19][20][21] and oxide-based DMS such as ZnO, TiO 2 , SnO 2 , In 2 O 3 etc.…”