Pulsed DC plasma CVD system for the deposition of DLC films

Mamun, Abdullah Al; Furuta, Hiroshi; Hatta, Akimitsu

doi:10.1016/j.mtcomm.2017.12.008

Cited by 22 publications

(6 citation statements)

References 23 publications

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“…In the case of a Pulsed DC power supply, the device architecture has to be able to shut off the voltage and current within microseconds to achieve a 'rectangular' signal shape. Therefore, the output stage of such a power supply needs to have either a very low output capacitance [76] or the ability to short both output terminals with a controlled electronic switch [77], [78]; this favors topologies such as, e.g., a synchronous buck converter. For better clarification, a comparison of the output stages of a simple DC and a Pulsed DC power supply for plasma processing is presented in Fig.…”

Section: Figure 13mentioning

confidence: 99%

High Performance Power Supplies for Plasma Materials Processing

2021

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Integrated circuits, flat panel displays, solar panels, architectural glass, high resolution camera and many other products are landmarks of the 21 st century. All of these different everyday objects have one thing in common -they are manufactured using plasma processing techniques. The aim of this paper is to introduce this silent hero of modern industry, to a broader audience. An evaluation is made of common types of power converters within the scope of plasma processing applications, while the key requirements and future challenges for such power supplies are discussed.INDEX TERMS Plasma applications, plasma materials processing, power conversion, power electronics.

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Section: Figure 13mentioning

confidence: 99%

High Performance Power Supplies for Plasma Materials Processing

2021

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“…However, when thermal energy is supplied, excited electrons may demonstrate tunneling behavior, as seen in semiconductors. It has also been reported that a weak p-type dopant can form in DLC films under certain conditions; therefore, it is possible to obtain p-type semiconducting DLC films by doping them with boron (Al Mamun et al, 2018). For n-type semiconductors, E act = E C -E F , while for p-type semiconductors, E act = E F -E V , where E F is the energy level, E C is the leading band mobility edge, and E V is the valence band mobility edge (Ma and Liu, 2001;Godet, 2002).…”

Section: Resultsmentioning

confidence: 99%

Improved Thermal Resistance and Electrical Conductivity of a Boron-Doped DLC Film Using RF-PECVD

Tan

Park

et al. 2020

Front. Mater.

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Diamond-like carbon (DLC) film doped with boron has unique properties and displays higher thermal resistance, lower internal stress, and better electrical conductivity than un-doped DLC film; this makes it is suitable for various applications, especially in outer space. Radio-frequency plasma-enhanced chemical vacuum deposition of boron-doped DLC film was performed to determine the optimal percentage of boron for improving thermal resistance. Additional heat treatment and 40 vol% B 2 H 6 /CH 4 yielded the best electrical conductivity. X-ray photoelectron spectroscopy, thermal gravimetric analysis, Raman spectroscopy, and the four-point probe method were utilized to analyze the properties of boron-doped DLC film. The boron-doped DLC film displayed outstanding performance in terms of thermal resistance and electrical conductivity.

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“…These variations with a decrease in the duty ratio are similar to that of a-C:H deposited at low temperature. 15) Therefore, it is implied that there are changes to the polymeric structure in the low duty ratio.…”

Section: Resultsmentioning

confidence: 99%

Effect of humidity on the friction properties of a-C:H and a-C:H:Si films deposited by PECVD employing microwave sheath-voltage combination plasma

Tanaka

Ikeda

Nakano

et al. 2018

Jpn. J. Appl. Phys.

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Si-doped diamond-like carbon (a-C:H:Si) films can be deposited at an ultra-high rate around 100 μm h −1 by using microwave sheath-voltage combination plasma (MVP), showing a friction coefficient of 0.05-0.1 similar to that of conventional a-C:H:Si films. However, the effect of humidity on the friction property of a-C:H:Si films deposited by MVP has not been studied. Thus, we investigate the frictional characteristics of a-C:H:Si films deposited on different duty ratios of 10, 30, and 50% using MVP, where a steel ball is slid against an a-C:H:Si film under dry conditions with 10%-50%RH. The a-C:H:Si film deposited on the low duty ratio of 10% became a polymeric structure. The friction coefficients of the a-C:H:Si films decreased with a decrease in the relative humidity. At the low relative humidity of 10%, it was shown that low friction below 0.06 is achieved by transfer film with the amorphous carbon structure formed on the mating ball.

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Pulsed DC plasma CVD system for the deposition of DLC films

Cited by 22 publications

References 23 publications

High Performance Power Supplies for Plasma Materials Processing

High Performance Power Supplies for Plasma Materials Processing

Improved Thermal Resistance and Electrical Conductivity of a Boron-Doped DLC Film Using RF-PECVD

Effect of humidity on the friction properties of a-C:H and a-C:H:Si films deposited by PECVD employing microwave sheath-voltage combination plasma

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