Pulsed-bias pulsed-RF harmonic load pull for Gallium Nitride (GaN) and wide band-gap (WBG) devices

Abstract

For the first time ever, a commercially available pulsed-bias pulsed-RF harmonic load pull system is being offered for high power and wide band-gap devices. Pulsing DC bias in conjunction with pulsing RF reduces slow (long-term) memory effects by minimizing self-heating and trapping, giving a more realistic observance of transistor operating conditions. IV, SParameter and Load Pull measurements taken under pulsed-bias pulsed-RF conditions give more accurate and meaningful results for high-power pulsed applications.

Experimental design method for GHz-band high-efficiency power amplifiers based on MHz-band active harmonics load-pull technique

“…In order to design harmonic impedance with a dependence on them, optimization in simulation or experimental tuning is required for the harmonics. However, the former requires a precise large-signal transistor model, and the latter requires a complex and expensive microwave loadpull system [5], [6]. For this issue, we propose an experimental design method based on a MHz-band active load-pull technique including harmonics tuning.…”