Pulsed anodic oxides for III-V semiconductor device fabrication

Abstract

Articles you may be interested inAtomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices J. Appl. Phys. 109, 064101 (2011); 10.1063/1.3553872Pulse response of thin III/V semiconductor photocathodes A simple procedure for the rapid formation of uniform native oxides on various III-V semiconductor materials is described. A puIsed applied potential drives an anodic oxide formation process on the semiconductor immersed in a glycol:water:acid solution. Uniform oxides up to 2000 A thick can be grown in a few minutes at room temperature and used to define areas for current injection into the semiconductor. AlGaAs diode lasers fabricated with 50-pm-wide current stripes defined by pulsed anodic oxide had threshold current densities substantially lower than lasers fabricated with 50-,um-wide stripes defined by chemical-vapor-deposited SiO,.

Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate

“…18 Additionally, we found that this anodic oxide layer was able to promote the intermixing of QWL after rapid thermal annealing ͑RTA͒.…”

Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing

“…9 The pulsed anodization technique has recently attracted attention as a new way of creating current blocking layers for ridge-waveguide quantum well laser fabrication, since it was simple, reliable, and cost-effective. 10 Pulsed anodized InGaAs single quantum well lasers grown by metalorganic chemical vapor deposition ͑MOCVD͒ were fabricated and found to have a threshold current of 5 mA. 11 The samples for this study were grown by low pressure MOCVD on the same p ϩ -GaAs wafer and thus have the same structure.…”

Photoelectrochemical Etching of InxGa1−xN

“…These films are degenerately ntype (~ 10 20 cm -3 ) due to residual defects or impurities. Ti metal contacts were patterned by liftoff on the periphery of the samples, and etching performed in a standard electrochemical cell consisting of a teflon sample holder and a Pt wire cathode [2][3][4][5][6][9][10][11][12][13][14]. An unfiltered 450W Hg arc lamp ~ 15cm from the sample provided illumination of the samples, which were immersed in unstirred KOH, NaOH or H 2 O/AZ400K solutions.…”

“…It has long been recognized that the dissolution rate of semiconductor materials may be enhanced in acid or base solutions by illumination with above bandgap light [10][11][12][13][14]. The basic mechanism for their photo-enhanced etching is oxidative dissociation of the semiconductor into its component elements (thereby consuming the photogenerated holes) and the subsequent reduction of the oxidizing agent in the solution by reaction with the photogenerated electrons.…”