Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing

Abstract

Influence of dielectric deposition parameters on the In 0.2 Ga 0.8 As / GaAs quantum well intermixing by impurity-free vacancy disordering J. Appl. Phys. 92, 1386 (2002) Impurity-free intermixing of GaAs/AlGaAs quantum wells using SiO x capping: Effect of nitrous oxide flow rate

Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells

“…29 Based upon previously reported measurements, 44 we predicted that the residual water in an anodically oxidized layer induces further oxidation of the GaAs at elevated temperatures. 30 We perform interdiffusion on two B samples under same conditions: anodized at current density of 40 mA/cm 2 for 4 min, rapid thermal annealed at 900°C for 75 s together. The only difference is that one sample has been annealed ͑prebaked͒ at 600°C for 5 min before the 900°C rapid thermal annealing to reduce the concentration of residual water in the anodic oxide.…”

High performance strain-compensated InGaAsN quantum-well ridge waveguide lasers

“…Constant current or pulsed current can be applied to oxidation process, but the oxide film quality by the former method is inferior to that by PAO process. Previously, PAO has been applied to quantum well (QW) intermixing in GaAs/AlGaAs and InGaAs/GaAs quantum well and quantum wire structures 8 , we have recently shown a significant reduction of threshold current density in AlGaInP/GaInP lasers by PAO 9 .…”

Pulsed anodic oxidation of GaAs for impurity-free interdiffusion of GaAs/AlGaAs quantum wells

“…7,9 In this paper, we discuss the possible mechanisms responsible for the interdiffusion of pulsed anodic oxidized GaAs/AlGaAs quantum wells.…”