Pulsed and CW IR Detection in Wide-gap Semiconductors using Extremely Nondegenerate Two-photon Absorption

Pattanaik, Himansu S.; Fishman, Dmitry A.; Hagan, David J.; Stryland, Eric W. Van

doi:10.1364/cleo_si.2013.ctu3e.3

Cited by 3 publications

(14 citation statements)

References 3 publications

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“…In these plots, the sum of the photon energies is shown scaled to the respective linear absorption edge energies of the bulk and QW since this allows comparing bulk and QW, semiconductors on the same scale. For the bulk case, 𝛼 2 𝐷 is plotted against the two-photon energy normalized to the bandgap, whereas for the QW, 𝛼 2 𝐷 | ∥ is plotted against the two-photon energy normalized to 𝐸 𝑔 + 𝐸 ℎℎ 11 for the TE-TE case, and 𝛼 2 𝐷 | ⊥ is plotted against the two-photon energy normalized to 𝐸 𝑔 + 𝐸 𝑙ℎ 11 for the TM-TM case. As we go higher in two-photon energy (2ℏ𝜔), 𝛼 2 𝐷 increases for photon energies close to the middle of the bandgap, goes through a maximum and then decreases for photon energies close to the bandgap.…”

Section: Degenerate Two-photon Absorption In Quantum Wellsmentioning

confidence: 99%

“…As discussed earlier, for the TE-TE case only ∆𝑛 = 0, and for the TM-TM case Δ𝑛 = ±1, are considered. In the TM-TM case, the first transition is from the 2 nd light-hole subband to the 1 st electron subband, thus the onset of 2PA occurs at 2ℏ𝜔 = 𝐸 𝑔 + 𝐸 𝑙ℎ 12 , rather than 2ℏ𝜔 = 𝐸 𝑔 + 𝐸 𝑙ℎ 11 . In the limiting case of a wide QW, both 𝛼 2 𝐷 | ∥ and 𝛼 2 𝐷 | ⊥ approach the bulk value 𝛼 2 𝐷 as seen in Fig.…”

Section: Degenerate Two-photon Absorption In Quantum Wellsmentioning

confidence: 99%

“…Two-photon absorption, 2PA, has a number of potential practical applications, such as photonic switching [1]- [5], optical limiting [6], [7], and others [8]- [11]. The study of 2PA is instrumental in investigating material properties, since two-photon transitions are subject to a set of selection rules that are distinct from those governing one-photon transitions [12]- [14].…”

Section: Introductionmentioning

confidence: 99%

“…[10]. The END-2PA in bulk semiconductors has also been used for detection of continuous wave IR laser light in uncooled GaAs p-i-n photodiodes [11], [57]. END enhancement is expected to be even more prominent in QW's near the band edge where the density of states and transition matrix elements exceed those of bulk semiconductors.…”

Section: Introductionmentioning

confidence: 99%

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Enhancement of Two-Photon Absorption in Quantum Wells for Extremely Nondegenerate Photon Pairs

Pattanaik

Reichert

Khurgin

et al. 2016

IEEE J. Quantum Electron.

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We recently demonstrated orders of magnitude enhancement of two-photon absorption (2PA) in direct gap semiconductors due to intermediate state resonance enhancement for photons of very different energies. It can be expected that further enhancement of nondegenerate 2PA will be observed in quantum wells (QW's) since the intraband matrix elements do not vanish near the band center as they do in the bulk, and the density of states in QW's is larger near the band edge.Here we present a perturbation-theory based theoretical description of nondegenerate 2PA in semiconductor QW's, where both frequency and polarization of two incident waves can vary independently. Analytical expressions for all possible permutations of frequencies and polarizations have been obtained, and the results are compared with degenerate 2PA in quantum wells along with degenerate and nondegenerate 2PA in bulk semiconductors. We show that using QW's in place of bulk semiconductors with both beams in the TM-polarized mode leads to an additional order of magnitude increase in the nondegenerate 2PA. Explicit calculations for GaAs QW's are presented.

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Section: Degenerate Two-photon Absorption In Quantum Wellsmentioning

confidence: 99%

Section: Degenerate Two-photon Absorption In Quantum Wellsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Enhancement of Two-Photon Absorption in Quantum Wells for Extremely Nondegenerate Photon Pairs

Pattanaik

Reichert

Khurgin

et al. 2016

IEEE J. Quantum Electron.

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“…There are many potential practical applications of optical nonlinearities in condensed matter, including all-optical switching [1][2][3][4], optical limiting [5,6], sensing [7,8], and imaging [9,10]. Additionally, these same nonlinearities limit the performance, particularly in optical telecommunication, and can lead to unwanted absorption or even damage of solid-state devices [11].…”

Section: Introductionmentioning

confidence: 99%

Nondegenerate two- and three-photon nonlinearities in semiconductors

et al. 2016

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Two-photon absorption, 2PA, in semiconductors is enhanced by two orders of magnitude due to intermediate-state resonance enhancement, ISRE, for very nondegenerate (ND) photon energies. Associated with this enhancement in loss is enhancement of the nonlinear refractive index, n2. Even larger enhancement of three-photon absorption is calculated and observed. These large nonlinearities have implications for applications including ND two-photon gain and twophoton semiconductor lasers. Calculations for enhancement of ND-2PA in quantum wells is also presented showing another order of magnitude increase in 2PA. Potential devices include room temperature gated infrared detectors for LIDAR and all-optical switches.

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Optical non-linearities and applications of ZnS phosphors

Chauhan,

Sharma,

Singh

et al. 2024

Adv. Opt. Technol.

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Optical non-linearities play a crucial role in enabling efficient and ultrafast switching applications that are essential for next-generation photonic devices. ZnS phosphor material produces the best results in terms of increased luminescence quantum yield when doped with certain impurities. Nevertheless, the investigation of the third-order non-linear optical susceptibility of the phosphor materials can be exploited for various switching applications. In this regard, we review the recent advancements in the investigation of non-linear optical properties of ZnS phosphors, where the knowledge of absorption and refraction is utilized in various optical and detector applications. Furthermore, the review highlights strategies employed to enhance the non-linear optical response of phosphor materials as well as a general discussion of an attosecond optical switching scheme which can be used to fabricate devices with petahertz speeds. Consequently, we provide a solution to the unsolved problem of the significant extension of optical limiting applications to switching applications by developing design strategies to manipulate conventional ZnS phosphor material. The potential challenges and future prospects of utilizing phosphor materials for switching applications are also addressed. The strategies for manipulating ZnS phosphor can be generalized for a broad range of other materials by minimizing linear and non-linear losses, while enhancing the values of the non-linear refractive index coefficient. We propose that the figure-of-merit of ZnS material can be enhanced by using a suitable combination of pump and probe wavelength values, which can be useful for optical switching applications.

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Pulsed and CW IR Detection in Wide-gap Semiconductors using Extremely Nondegenerate Two-photon Absorption

Cited by 3 publications

References 3 publications

Enhancement of Two-Photon Absorption in Quantum Wells for Extremely Nondegenerate Photon Pairs

Enhancement of Two-Photon Absorption in Quantum Wells for Extremely Nondegenerate Photon Pairs

Nondegenerate two- and three-photon nonlinearities in semiconductors

Optical non-linearities and applications of ZnS phosphors

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