Pulse voltage stress degradation of 4H-SiC Schottky diodes studied by I-V and noise measurements

Low Frequency Noise of GaAs MESFET Degraded in ESD Test

“…Recently we have made several experiments performed on SiC Schotky diodes to get more understanding of ESD stress applied on compound heterointerface [1]. In the most cases failure mechanisms in Schottky contacts are diffusion related.…”