Pulse modulated electron cyclotron resonance plasma for chemical vapor deposition of diamond films

Abstract

Articles you may be interested inModeling and analysis of hydrogen-methane plasma in electron cyclotron resonance chemical vapor deposition of diamond-like carbon J. Appl. Phys. 91, 40 (2002); 10.1063/1.1421038Microstructural studies of diamond thin films grown by electron cyclotron resonance-assisted chemical vapor deposition A new nucleation method by electron cyclotron resonance enhanced microwave plasma chemical vapor deposition for deposition of (001)-oriented diamond films Deposition of diamond-like carbon films using the screen grid method in electron cyclotron resonance chemical vapor deposition Role of oxygen in the electron cyclotron resonance plasmaassisted chemical vapor deposition of diamond films

Time-resolved plasma diagnostics for a better understanding of the improvement of pulsed MWPACVD of diamond

“…They considered that only the average power density must be taken into account for the creation of reactive species that interact with the substrate surface. These results are in contradiction with those of Noda et al [1] and Hatta et al [2,3], as well as with the works of Chatei et al [7,8] (hereafter referred to as II) who showed an improvement of the quality of diamond thin films achieved in a similar tubular reactor working with a lowfrequency pulsed mode. However, the experiments reported in I were performed using different conditions than those used in II.…”

“…In fact, Noda et al [1] have shown that the quality of diamond films is greatly improved when pulsing the discharge. In the same way, the growth rate of the diamond layer can be increased by up to a factor of 3 in a pulsed ECR plasma compared with a continuous process [2,3], while the films consist of faceted micro-crystalline diamond particles in both cases. These authors also pointed out a decrease in growth rate when using a power pulse repetition rate higher than 500 Hz.…”

Improvement of nanocrystalline diamond film growth process using pulsed Ar/H2/CH4microwave discharges

“…enhancement of the production of H atoms [5,6], which is an sp 2 phase-etching species for the considered growth process [7]. The increase in the growth rate has also been noticed in pulsed ECR plasmas [2]. The possibility of controlling the chemical kinetics and energy dissipation in the plasma by varying the pulse repetition rate and/or the duty cycle in relation to PCD growth optimization has been previously discussed [8,9].…”

“…the pulse period. Thus, depending on the experimental device and the operating conditions, it has been reported that, compared to the CW process, the pulsed mode permits to improve the purity of diamond [1][2][3][4]. This has been attributed, in particular, to an 3 Author to whom any correspondence should be addressed.…”

Soft ion impact for surface activation during diamond chemical-vapor deposition on diamond and silicon

“…2,3 The subsequent works by Hatta et al examined the temporal or time-averaged variations of radical densities during diamond growth with applying a positive substrate bias in pulse-modulated microwave plasmas at 100 mTorr. 4 The recent works by Teii and Yoshida revealed that an ion-bombardment energy as low as 2 eV only allowed faceted diamond growth and a high ion flux relative to radical flux as well as a low radical density caused the growth suppression in high-density radio-frequency ͑rf͒ plasmas at 10ϳ80 mTorr. 5 Any of these studies tends to prefer the avoidance of ion bombardment over the use of it.…”