Pulse Electrodeposition of Copper-Manganese Alloy for Application in Interconnect Metallization

Joi, Aniruddha; Akolkar, Rohan; Landau, Uziel

doi:10.1149/2.024312jes

Cited by 7 publications

(5 citation statements)

References 23 publications

(35 reference statements)

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“…5b). Segregation of Mn to the Cu-Mn film surface after heat-treatment has also been reported previously for Cu-Mn films fabricated by electrodeposition 5 or by PVD. 8 To further evaluate the distribution of Mn in the electroless Cu-Mn layer after heat-treatment, we deposited ≈80 nm of Cu-Mn by electroless deposition onto a Si wafer pre-coated with a thin (≈2 nm thick) Ru layer.…”

Section: Mn Diffusion Characteristics Relevant To Interconnect Applic...supporting

confidence: 78%

“…To improve the reliability of Cu interconnects, alloys constituting dilute single-phase solid solutions of Cu are commonly employed, such as Cu-Al, 2 Cu-Ag, 3 Cu-Ti 4 and Cu-Mn. 5 Of these alternatives, Cu-Mn has attracted great attention in the last decade. For sputter-deposited Cu-Mn interconnect structures, it was shown that thermal processing facilitates Mn diffusion to the interface between the Cu and the overlying 'etch-stop' (Si 3 N 4 ).…”

mentioning

confidence: 99%

“…In comparison to PVD, electrochemical deposition of Cu-Mn offers low cost and high throughput. Electrodeposition of Cu-Mn has been reported 5,17,18 previously. However, a major challenge has been the scale-up onto large-area wafers while minimizing the terminal effects and providing uniform deposit distribution.…”

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confidence: 99%

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Electroless Deposition of Copper-Manganese for Applications in Semiconductor Interconnect Metallization

Vashaei

Ernst

et al. 2016

J. Electrochem. Soc.

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Manganese-doped copper interconnects are known to provide superior electromigration resistance and thus are attractive for further downscaled interconnect metallization in future high-performance microprocessors. In the present study, we report on Cu–Mn (copper–manganese) fabricated by electroless deposition. Using tartrate-complexed electrolytes, we achieved electroless plating of Cu–Mn with (4.0 ± 0.5) at.% Mn. Electrochemical studies determined the most likely oxidation state of the Mn in the deposit to be +2. This suggests incorporation of MnO or Mn(OH)2 during deposition. After heat-treatment of the Cu–Mn films, X-ray photoelectron spectroscopy indicated Mn segregation at the film surface. Moreover, transmission electron microscopy demonstrates Mn segregation at Cu-substrate interface. These observations suggest that Mn transport in electroless-deposited Cu–Mn can be exploited to engineer future interconnects with improved reliability and ‘self-forming’ barrier properties. Challenges to be addressed in future studies are highlighted.

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Section: Mn Diffusion Characteristics Relevant To Interconnect Applic...supporting

confidence: 78%

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confidence: 99%

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Electroless Deposition of Copper-Manganese for Applications in Semiconductor Interconnect Metallization

Vashaei

Ernst

et al. 2016

J. Electrochem. Soc.

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“…The ligand selectively complexes with Cu, thus changing its electronic structure and shifting its reduction potential negatively towards that of Mn [28], thereby allowing for co-deposition at similar potentials. Some ligands that have been used in literature for Mn-alloys include EDTA, tartrate, and gluconate [12,29]. However, the most used one is ammine (NH 3 ), which comes from ammonium sulfate electrolytes [4,5,11].…”

Section: Introductionmentioning

confidence: 99%

Electrodeposition of Cu-Mn Films as Precursor Alloys for the Synthesis of Nanoporous Cu

Castillo

Dimitrov

2021

Electrochem

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Cu-Mn alloy films are electrodeposited on Au substrates as precursor alloys for the synthesis of fine-structured nanoporous Cu structures. The alloys are deposited galvanostatically in a solution containing ammonium sulfate, (NH4)2SO4, which serves as a source of the ammine ligand that complexes with Cu, thereby decreasing the inherent standard reduction potential difference between Cu and Mn. The formation of the [Cu(NH3)n]2+ complex was confirmed by UV-Vis spectroscopic and voltammetric studies. Galvanostatic deposition at current densities ranging from 100 to 200 mA⋅cm−2 generally resulted in the formation of type I, crystalline coatings as revealed by scanning electron microscopy. Although the deposition current efficiency is (<30%) generally low, the atomic composition (determined by energy dispersive X-ray spectroscopy) of the deposited alloys range from 70–85 at% Mn, which is controlled by simply adjusting the ratio of the metal ion concentrations in the deposition bath. Anodic stripping characterization revealed a three-stage dissolution of the deposited alloys, which suggests control over the selective removal of Mn. The composition of the alloys obtained in the studies are ideal for electrochemical dealloying to form nanoporous Cu.

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“…A significant reduction of material transport along the GBs has been achieved by alloying Cu with Al 8 and Mn. [9][10][11] In order to predict interconnect failure behavior it is important to capture both the GB distribution and the physics of a single GB in a satisfactory manner.…”

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confidence: 99%

Review—Modeling Methods for Analysis of Electromigration Degradation in Nano-Interconnects

Ceric

Selberherr

Zahedmanesh

et al. 2021

ECS J. Solid State Sci. Technol.

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Mitigation of the degradation for down-scaled interconnects requires an in-depth understanding of the failure mechanisms of electromigration and, therefore, the development of adequate simulation models based on this understanding. We present a novel concept for modeling of nano-interconnect structures, the effective domain method, which describes the impact of grain boundaries and grain distribution on the nano-interconnect reliability and how this impact changes with down-scaling of the interconnect width. Furthermore, a simple and numerically efficient approach for modeling of void growth and its influence on nano-interconnect resistivity is presented. Both novel approaches are studied on timely nano-interconnect layouts and discussed in comparison to experimental results. The simulations based on the novel modeling concept predict the reduction of interconnect lifetime with increased temperature and the reduced linewidth, as observed in experiments.

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Pulse Electrodeposition of Copper-Manganese Alloy for Application in Interconnect Metallization

Cited by 7 publications

References 23 publications

Electroless Deposition of Copper-Manganese for Applications in Semiconductor Interconnect Metallization

Electroless Deposition of Copper-Manganese for Applications in Semiconductor Interconnect Metallization

Electrodeposition of Cu-Mn Films as Precursor Alloys for the Synthesis of Nanoporous Cu

Review—Modeling Methods for Analysis of Electromigration Degradation in Nano-Interconnects

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