Pulse Electrodeposited ZnSeTe Films

Abstract

ZnSexTe1-x films were deposited by pulse electrodeposition technique for the first time. The films exhibited cubic structure. With lattice parameter increasing from 0.579 to 0.605 nm as the Te content increased. Band gap values in the range of 2.35 eV - 2.69 eV are observed as the ZnSe concentration increased. Refractive index was found to vary from 2.83 - 2.53 with increase of 'x' value. Raman spectra exhibit the ZnSe like LO phonons. Photoluminescence spectra of ZnSe1-xTex films with different tellurium content confirms that the Te isovalent impurities exactly replace the Se atoms whose electronic configurations are the same.

Photoelectrochemical Properties of Brush Plated CdSTe Films

“…Therefore, a full understanding of the CdS x Te 1-x mixed system is warranted. Earlier several techniques like PVD, chemical deposition, pulse electrodepsoiton etc have been employed for the deposition of CdS x Te 1x films [1][2][3][4][5]. In this work, CdS x Te 1-x films were deposited for the first time by the brush plating technique.…”