Photoelectrochemical Properties of Brush Plated CdSTe Films

Abstract

CdS x Te 1-x films were deposited for the first time by the brush plating technique. The films were pol;ycrystalline with peaks corresponding to the hexagonal phase. The variation of lattice parameters 'a' and 'c' with composition is linear and obeys Vegard's law. The band gap was found to vary from 1.44 eV to 2.41 eV as the percentage of CdTe decreased. The power output characteristics after 80 s photoetching indicates a V oc of 0.62 V, Jsc of 16.00 mA cm -2 , ff of 0.76, ⎜ of 9.55% for 80 mWcm -2 illumination. The photovoltaic parameters are higher than earlier reports.