1986
DOI: 10.3348/jkrs.1986.22.1.49
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Pulmonary manifestation of leptospirosis

Abstract: Department 0; Path%gy, College of ι1edicine, 5eou/ Nationa/ University Authors analysed and present chest X-ray findings of serologically proven leptospi rosis from Seoul National University Hospital, either admitted or referred for serological verification, during recent 2 years Radiological findings were correlated with the lung specimen find ing of experimentally induced leptospirosis In gUlnea plgThe results are as follows:1. 24 cases (56'\)) sho、ved positive X-ray findings 2. Predominent radiological patt… Show more

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“…This combination of remarkable TFT device performance (μ sat ∼ 6-9 cm 2 /V s; V th = + 1.6 V) with room temperature processing has, in a few short years, led to the development of other amorphous metal oxides (with the (n− 1) d 10 ns 0 (n ≥ 4) electronic configuration) for TTFT channels such as ZnO-rich a-ZIO (ZnO:In 2 O 3 molar ratio of 2:1) [2] and a-ZSO (ZnO:SnO 2 molar ratios of 1:1 and 1:2) [3,4] with field effect mobility of ∼ 20-50 cm 2 /V s. More recently, TFTs with similar performance but based on indium-rich oxides such as IZO (In 2 O 3 :ZnO 2:1) and IGO (In 2 O 3 :Ga 2 O 3 1:1) have been reported from labs in Asia [5,6], Europe [7,8], and the US [9,10].…”
Section: Introductionmentioning
confidence: 96%
See 1 more Smart Citation
“…This combination of remarkable TFT device performance (μ sat ∼ 6-9 cm 2 /V s; V th = + 1.6 V) with room temperature processing has, in a few short years, led to the development of other amorphous metal oxides (with the (n− 1) d 10 ns 0 (n ≥ 4) electronic configuration) for TTFT channels such as ZnO-rich a-ZIO (ZnO:In 2 O 3 molar ratio of 2:1) [2] and a-ZSO (ZnO:SnO 2 molar ratios of 1:1 and 1:2) [3,4] with field effect mobility of ∼ 20-50 cm 2 /V s. More recently, TFTs with similar performance but based on indium-rich oxides such as IZO (In 2 O 3 :ZnO 2:1) and IGO (In 2 O 3 :Ga 2 O 3 1:1) have been reported from labs in Asia [5,6], Europe [7,8], and the US [9,10].…”
Section: Introductionmentioning
confidence: 96%
“…A basic review of the minimum TFT properties that are required for use in active matrix LCD's include [15]: a field effect (FE) mobility of at least 1 cm 2 /V s, on/off ratio of N 10 6 and, to allow the use of flexible substrates, low temperature processing. The requirement for high mobility and low processing temperatures is easily full-filled with dc-magnetron sputtered amorphous indium-based oxides.…”
Section: Introductionmentioning
confidence: 99%