“…This combination of remarkable TFT device performance (μ sat ∼ 6-9 cm 2 /V s; V th = + 1.6 V) with room temperature processing has, in a few short years, led to the development of other amorphous metal oxides (with the (n− 1) d 10 ns 0 (n ≥ 4) electronic configuration) for TTFT channels such as ZnO-rich a-ZIO (ZnO:In 2 O 3 molar ratio of 2:1) [2] and a-ZSO (ZnO:SnO 2 molar ratios of 1:1 and 1:2) [3,4] with field effect mobility of ∼ 20-50 cm 2 /V s. More recently, TFTs with similar performance but based on indium-rich oxides such as IZO (In 2 O 3 :ZnO 2:1) and IGO (In 2 O 3 :Ga 2 O 3 1:1) have been reported from labs in Asia [5,6], Europe [7,8], and the US [9,10].…”