Amorphous IZO-based transparent thin film transistors

Paine, David C.; Yağlıoğlu, Burağ; Beiley, Zach M.; Lee, Sunghwan

doi:10.1016/j.tsf.2007.10.081

Cited by 226 publications

(117 citation statements)

References 17 publications

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“…1,2) They are widely applied in various optoelectronic devices, such as the active channel layer of thin film transistors (TFTs) 3,4) and the electrodes of organic light emitting devices or thin film solar cells. [5][6][7][8] Various technologies have been used to prepare ZnO-based thin films, such as RF/DC magnetic sputtering, 9,10) pulsed laser deposition (PLD), 11) chemical vapor deposition (CVD) 12) and the sol-gel method.…”

Section: Introductionmentioning

confidence: 99%

Surface Characteristics, Optical and Electrical Properties on Sol-Gel Synthesized Sn-Doped ZnO Thin Film

et al. 2010

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Un-doped ZnO and Sn-doped ZnO (SZO) thin films were synthesized using the sol-gel method. The surface morphology of the SZO films showed a large amount of crystallization. Doping with tin dopants not only reduced the surface roughness of the film, but also repaired defects in the pore structure. Notably, the SZO film with a crystallization temperature of 650 C possessed better crystallization and fewer defects when tin dopants were added. XPS analysis confirmed the presence of O-Sn 4þ phases proving the contribution of tin doping on the electrical conductivity of the SZO films. With regards the PL spectra, luminescence in the Zn 2 SnO 4 phase was observed and affected the red-shifted of broad visible emission. In addition, the 9 at% Sn doped ZnO (S 9 ZO) film showed excellent optical transmittance, however the transmittance improved further when the trace of tin dopants (0.4 at%) and 2 at% In were doped in ZnO matrix (I 2 S 0:4 ZO).

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Section: Introductionmentioning

confidence: 99%

Surface Characteristics, Optical and Electrical Properties on Sol-Gel Synthesized Sn-Doped ZnO Thin Film

et al. 2010

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“…The industrial relevance of HfO 2 is evident by Intel Corporation's milestone of incorporating high-k hafnium-based dielectric material into their 45-nm CMOS process technology [6,7]. Thin film transistors (TFTs) based on metal oxide channel materials such as zinc oxide (ZnO), [8][9][10][11][12][13][14] indium zinc oxide (IZO) [15,16] and indium gallium zinc oxide (IGZO) [17][18][19] may equally benefit from incorporation of HfO 2 as the gate dielectric. The motivation for this is the drive towards flexible displays on plastic substrates using organic (polymer or small molecule) light emitting diodes (OLEDs) [20].…”

mentioning

confidence: 99%

High‐density remote plasma sputtering of high‐dielectric‐constant amorphous hafnium oxide films

Bayer

Hofmann

et al. 2013

Physica Status Solidi (b)

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Hafnium oxide (HfO x ) is a high dielectric constant (k) oxide which has been identified as being suitable for use as the gate dielectric in thin film transistors (TFTs). Amorphous materials are preferred for a gate dielectric, but it has been an ongoing challenge to produce amorphous HfO x while maintaining a high dielectric constant. A technique called high target utilization sputtering (HiTUS) is demonstrated to be capable of depositing high-k amorphous HfO x thin films at room temperature. The plasma is generated in a remote chamber, allowing higher rate deposition of films with minimal ion damage. Compared to a conventional sputtering system, the HiTUS technique allows finer control of the thin film microstructure. Using a conventional reactive rf magnetron sputtering technique, monoclinic nanocrystalline HfO x thin films have been deposited at a rate of $1.6 nm min À1 at room temperature, with a resistivity of 10 13 V cm, a breakdown strength of 3.5 MV cm À1 and a dielectric constant of $18.2. By comparison, using the HiTUS process, amorphous HfO x (x ¼ 2.1) thin films which appear to have a cubic-like short-range order have been deposited at a high deposition rate of $25 nm min À1 with a high resistivity of 10 14 V cm, a breakdown strength of 3 MV cm À1 and a high dielectric constant of $30. Two key conditions must be satisfied in the HiTUS system for high-k HfO x to be produced. Firstly, the correct oxygen flow rate is required for a given sputtering rate from the metallic target. Secondly, there must be an absence of energetic oxygen ion bombardment to maintain an amorphous microstructure and a high flux of medium energy species emitted from the metallic sputtering target to induce a cubiclike short range order. This HfO x is very attractive as a dielectric material for large-area electronic applications on flexible substrates.

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“…Such properties can induce various effects in the active channel layers and electrodes of thin-film transistors. 8 Generally, heat treatment is carried out on amorphous films to obtain polycrystalline films with new transport characteristics.…”

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confidence: 99%

Weak localization and percolation effects in annealed In2O3-ZnO thin films

et al. 2011

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We have investigated the temperature T and magnetic field H dependences of the sheet resistance R□ of thin (In2O3)0.975-(ZnO)0.025 films with different resistivities and carrier densities prepared by postannealing in air at various annealing temperatures Ta. Regarding the magnetoconductance Δσ(H) ≡ 1/R□(H) − 1/R□(0) of films with large values of sheet resistance R□, agreement between weak localization theory and the data cannot be obtained for any value of the localization length L in (T) = D τ in (T) , where D and τin are the diffusion constant and inelastic scattering time, respectively. Taking account of the inhomogeneous morphology confirmed by Scanning Electron Microscopy (SEM) observation, we introduced the effective sheet resistance R□eff given by R□eff = α × R□meas., where the strength of reduction factor α is less than unit, α ⩽ 1. Using a suitable value of α(Ta), we successfully fitted the theory to data for Δσeff(H, T), regarding Lin2(T) as a fitting parameter in the region 2.0 K⩽T ⩽ 50 K. It was confirmed that the rate 1/τin(T) is given by the sum of the electron-electron and electron-phonon inelastic scattering rates

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Amorphous IZO-based transparent thin film transistors

Cited by 226 publications

References 17 publications

Surface Characteristics, Optical and Electrical Properties on Sol-Gel Synthesized Sn-Doped ZnO Thin Film

Surface Characteristics, Optical and Electrical Properties on Sol-Gel Synthesized Sn-Doped ZnO Thin Film

High‐density remote plasma sputtering of high‐dielectric‐constant amorphous hafnium oxide films

Weak localization and percolation effects in annealed In2O3-ZnO thin films

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