Publisher's Note: Temperature dependence of the resistance of metallic nanowires of diameter<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mo>⩾</mml:mo><mml:mn>15</mml:mn><mml:mspace width="0.3em" /><mml:mi>nm</mml:mi></mml:mrow></mml:math>: Applicability of Bloch-Grüneisen theorem [Phys. Rev. B<b>74</b>, 035426 (2006)]

Bid, Aveek; Bora, Achyut; Raychaudhuri, A. K.

doi:10.1103/physrevb.74.079903

Cited by 110 publications

(158 citation statements)

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“…It has been demonstrated that the resistivity of nanowires is dependent on the wire diameter and increases above that of the bulk significantly. 33 In the case of AgNWs with a diameter 100 nm, Bid et al found the resistivity to be 2.78 × 10 −8 Ω m. Considering the NW diameter (105 nm on average), R EPP is on the order of a few thousand ohms, in good agreement with the steps in resistance observed at low temperature in Fig. 1a and 1f.…”

Section: Quantized Activation Of Percolationsupporting

confidence: 73%

Metallic nanowire networks: effects of thermal annealing on electrical resistance

et al. 2014

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a Metallic nanowire networks have huge potential in devices requiring transparent electrodes. This article describes how the electrical resistance of metal nanowire networks evolve under thermal annealing.Understanding the behavior of such films is crucial for the optimization of transparent electrodes which find many applications. An in-depth investigation of silver nanowire networks under different annealing conditions provides a case study demonstrating that several mechanisms, namely local sintering and desorption of organic residues, are responsible for the reduction of the systems electrical resistance. Optimization of the annealing led to specimens with transmittance of 90% (at 550 nm) and sheet resistance of 9.5 Ω sq −1. Quantized steps in resistance were observed and a model is proposed which provides good agreement with the experimental results. In terms of thermal behavior, we demonstrate that there is a maximum thermal budget that these electrodes can tolerate due to spheroidization of the nanowires. This budget is determined by two main factors: the thermal loading and the wire diameter. This result enables the fabrication and optimization of transparent metal nanowire electrodes for solar cells, organic electronics and flexible displays.

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Section: Quantized Activation Of Percolationsupporting

confidence: 73%

Metallic nanowire networks: effects of thermal annealing on electrical resistance

et al. 2014

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“…The analysis of our data leads to an average nanowire resistance of R NW ¼ ð4:9660:18Þ X=lm. By using Pouillet's law for resistors with uniform cross-section (R ¼ q Á l Á p À1 r À2 ) and a resistivity of q % 2:78 Â 10 À8 Xm (for AgNWs with a diameter of 100 nm), 13 a theoretically calculated resistance for a single AgNW of our used dispersion (mean diameter of 90 nm) of about 4:40 X=lm can be obtained, which is in good accordance with the measured value of R NW ¼ 4:96 X=lm. By means of the latter value, we can extract an average nanowire junction resistance of R J ¼ ð25:261:9Þ X for annealed AgNWs.…”

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confidence: 99%

Electrical limit of silver nanowire electrodes: Direct measurement of the nanowire junction resistance

Selzer

Floresca²,

Kneppe

et al. 2016

Applied Physics Letters

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We measure basic network parameters of silver nanowire (AgNW) networks commonly used as transparent conducting electrodes in organic optoelectronic devices. By means of four point probing with nanoprobes, the wire-to-wire junction resistance and the resistance of single nanowires are measured. The resistance RNW of a single nanowire shows a value of RNW=(4.96±0.18) Ω/μm. The junction resistance RJ differs for annealed and non-annealed NW networks, exhibiting values of RJ=(25.2±1.9) Ω (annealed) and RJ=(529±239) Ω (non-annealed), respectively. Our simulation achieves a good agreement between the measured network parameters and the sheet resistance RS of the entire network. Extrapolating RJ to zero, our study show that we are close to the electrical limit of the conductivity of our AgNW system: We obtain a possible RS reduction by only ≈20% (common RS≈10 Ω/sq). Therefore, we expect further performance improvements in AgNW systems mainly by increasing NW length or by utilizing novel network geometries.

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“…Постоянная n принимает целочисленные значения 2, 3 и 5 в зависимости от того, какой механизм рассеяния оказывается доминирующим. Поведение, характерное для функции Блоха-Грюнайзена, наблюдалось при изу-чении влияния электрон-фононного взаимодействия на сопротивление металличе-ских нанопроводов [3], [4] и нанокристаллических металлических пленок и при ис-следовании сопротивления сверхпроводящих материалов в нормальном состоянии [5], [6]. Подобрав при этом соответствующим образом данные измерений в широком диапазоне температур с использованием выражения (1), можно получить не толь-ко целочисленные, но и нецелочисленные значения индекса n, например n = 1.5 и n = 4.5 [7], [8].…”

Section: Introductionunclassified

Функция Блоха - Грюнайзена Произвольного Порядка И Ее Разложения В Ряд

Свижович¹,

Cvijović²

2011

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Publisher's Note: Temperature dependence of the resistance of metallic nanowires of diameter⩾15nm: Applicability of Bloch-Grüneisen theorem [Phys. Rev. B74, 035426 (2006)]

Cited by 110 publications

References 0 publications

Metallic nanowire networks: effects of thermal annealing on electrical resistance

Metallic nanowire networks: effects of thermal annealing on electrical resistance

Electrical limit of silver nanowire electrodes: Direct measurement of the nanowire junction resistance

Функция Блоха - Грюнайзена Произвольного Порядка И Ее Разложения В Ряд

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