Publisher’s Note: “Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures” [Appl. Phys. Lett. 94, 142904 (2009)]

BaTiO3 Integration with Nanostructured Epitaxial (100), (110), and (111) Germanium for Multifunctional Devices

“…1−11 Among all perovskite materials, BaTiO 3 (BTO) has been widely studied for integration with semiconductors, and also, it has a high relative permittivity that can be used as the gate dielectric in a next-generation metal-oxide semiconductor field-effect transistor (MOSFET) to reduce the operating voltage and minimize the gate leakage. In fact, BTO has been used as a part of the gate dielectric in Si MOSFET to reduce the subthreshold swing and increase the ON current with the drawback of hysteresis in the output characteristics of a transistor, 12,13 to control the free carrier concentration in the ZnO channel, 3,6 as a BTO/InN heterojunction for optical and electrical devices, 1 and for 6× reduction of gate leakage current in BTO/Ge MOS capacitor. 10 To use BTO as a gate dielectric to continue transistor miniaturization in the channel length down to a 5 nm gate length according to the International Technology Roadmap for Semiconductors, 14 low band gap channel materials with superior transport properties are required to achieve a further increase in transistor drive current in a nanoscale transistor.…”