Publisher’s Note: Low-temperature dependence of the thermomagnetic transport properties of the SrTiO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>/LaAlO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>interface [Phys. Rev. B<b>84</b>, 075423 (2011)]

Lerer, S.; Shalom, M. Ben; Deutscher, G.; Dagan, Y.

doi:10.1103/physrevb.84.119905

Cited by 13 publications

(19 citation statements)

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“…At intermediate electron densities, Ref. 28 found that the conductivity of the high-density component is nearly independent of T (up to 30 K), while the conductivity of the lowdensity component drops by an order of magnitude. Similarly, Fig.…”

Section: Discussionmentioning

confidence: 99%

“…31 reports that for high electron densities, the high-mobility component of their electron gas comprises less than 10% of the total electron density, while Ref. 28 found that at intermediate densities the high-mobility component contains a third of the total electron density. Similarly, Fig.…”

Section: Discussionmentioning

confidence: 99%

“…The mobilities of the two components vary from sample to sample, and may differ by orders of magnitude. [27][28][29][30][31] While the twoband interpretation is conceptually useful, it has been noted that inconsistencies within the two-band analysis suggest a more complicated band structure. 30 At low electron densities, the picture is clearer: experiments have found a Lifshitz transition near electron densities of 1.5 × 10 13 cm −2 , 30 which is slightly above the metalinsulator transition at ≈ 10 13 cm −2 .…”

Section: Discussionmentioning

confidence: 99%

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Temperature-dependent band structure ofSrTiO3interfaces

Raslan¹,

Lafleur²,

Atkinson³

2017

Phys. Rev. B

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We build a theoretical model for the electronic properties of the two-dimensional (2D) electron gas that forms at the interface between insulating SrTiO3 and a number of polar cap layers, including LaTiO3, LaAlO3, and GdTiO3. The model treats conduction electrons within a tight-binding approximation, and the dielectric polarization via a Landau-Devonshire free energy that incorporates strontium titanate's strongly nonlinear, nonlocal, and temperature-dependent dielectric response. The self-consistent band structure comprises a mix of quantum 2D states that are tightly bound to the interface, and quasi-three-dimensional (3D) states that extend hundreds of unit cells into the SrTiO3 substrate. We find that there is a substantial shift of electrons away from the interface into the 3D tails as temperature is lowered from 300 K to 10 K. This shift is least important at high electron densities (∼ 10 14 cm −2 ), but becomes substantial at low densities; for example, the total electron density within 4 nm of the interface changes by a factor of two for 2D electron densities ∼ 10 13 cm −2 . We speculate that the quasi-3D tails form the low-density high-mobility component of the interfacial electron gas that is widely inferred from magnetoresistance measurements.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

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Temperature-dependent band structure ofSrTiO3interfaces

Raslan¹,

Lafleur²,

Atkinson³

2017

Phys. Rev. B

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“…31 An anomalous low-T behavior of thermopower in LaAlO 3 /SrTiO 3 was also reported. 32 The first S measurement in the extended T = 4-300 K range 33 revealed the presence of an impressively narrow and deep peak (∼ 500 µV/K) below T =50 K, in striking contrast with the underlying diffusive regime which dictates a smooth and almost linear approach to zero with decreasing temperature. For assonance with the thermoelectric behavior of semiconductor-based quantum wells [34][35][36] , it was logical to attribute the peak to the phonon-drag effect, i.e.…”

Section: Introductionmentioning

confidence: 99%

Large phonon-drag enhancement induced by narrow quantum confinement at theLaAlO3/SrTiO3interface

et al. 2016

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The thermoelectric power of the two-dimensional electron system (2DES) at the LaAlO3/SrTiO3 interface is explored below room temperature, in comparison with that of Nb-doped SrTiO3 single crystals. For the interface we find a region below T =50 K where thermopower is dominated by phonon-drag, whose amplitude is hugely amplified with respect to the corresponding bulk value, reaching values ∼mV/K and above. The phonon-drag enhancement at the interface is traced back to the tight carrier confinement of the 2DES, and represents a sharp signature of strong electronacoustic phonon coupling at the interface.

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“…28,29 The dependence on magnetic field of the low field R H for the different temperatures can be captured by the same two-band model (see Fig. 3) taking into account the temperature dependence of the scattering time (1/s ¼ 1/s e þ 1/s i, s e and s i being the elastic and the inelastic scattering times, respectively, and s i / T À2.8 , see Fig.…”

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confidence: 99%

Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface

Fête

Cancellieri

et al. 2015

Applied Physics Letters

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We have studied the electronic properties of the 2D electron liquid present at the LaAlO3/SrTiO3 interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650 °C exhibit the highest low temperature mobility (≈10 000 cm2 V−1 s−1) and the lowest sheet carrier density (≈5×1012 cm−2). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800–900 °C) display carrier densities in the range of ≈2−5×1013 cm−2 and mobilities of ≈1000 cm2 V−1 s−1 at 4 K. Reducing their carrier density by field effect to 8×1012 cm−2 lowers their mobilities to ≈50 cm2 V−1 s−1 bringing the conductance to the weak-localization regime.

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Publisher’s Note: Low-temperature dependence of the thermomagnetic transport properties of the SrTiO3/LaAlO3interface [Phys. Rev. B84, 075423 (2011)]

Cited by 13 publications

References 0 publications

Temperature-dependent band structure ofSrTiO3interfaces

Temperature-dependent band structure ofSrTiO3interfaces

Large phonon-drag enhancement induced by narrow quantum confinement at theLaAlO3/SrTiO3interface

Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface

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