Psychobiography and Psychohistory

Crosby, Faye J.; Crosby, Travis L.

doi:10.1007/978-1-4684-1074-7_3

Cited by 11 publications

(4 citation statements)

References 72 publications

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“…The use of archival sources to study various aspects of personality and of individual reactions to a range of historical events is not only the central concern of the disciplines of history and biography but has been increasingly popular in political science and in psychology (Crosby & Crosby, 1981; Knutson, 1973; Wrightsman, 1981). One theoretical starting point for such research has been the construct of conceptual complexity as a cognitive personality trait (Harvey, Hunt, & Schroder, 1961; Schroder, Driver, & Streufert, 1967; Streufert & Streufert, 1978).…”

Section: Historical Factorsmentioning

confidence: 99%

APA presidential addresses: The relation of integrative complexity to historical, professional, and personal factors.

Suedfeld¹

1985

Journal of Personality and Social Psychology

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The 85 extant presidential addresses of the American Psychological Association (APA) were scored for integrative complexity, a factor denned by the degree of differentiation and integration of dimensions along which information is processed. As in previous studies, complexity was lower when the United States was engaged in a war. This predicted effect of societal stress was not found in times of economic difficulty nor during United States presidential election years. APA presidents who were judged as particularly eminent by senior colleagues gave addresses higher in complexity; there was no difference as a function of other types of eminence ratings nor objective measures (publication and citation counts). No sex or age difference was found, but there was a positive correlation between complexity and the number of years of life remaining to the individual. An examination of professional orientation indicated that a tendency away from conventional scientific rigor was associated with higher complexity.

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Section: Historical Factorsmentioning

confidence: 99%

APA presidential addresses: The relation of integrative complexity to historical, professional, and personal factors.

Suedfeld¹

1985

Journal of Personality and Social Psychology

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“…Thermally grown layers of silicon dioxide have been an integral part of silicon device technology since their first applications in surface protection and selective masking during diffusion (1) and in stabilizing silicon surfaces (2). Silicon dioxide layers found additional applications in device isolation, impurity gettering, masking against impurities, junction passivation, and insulation between metal layers (3)(4)(5)(6). Such applications have made silicon oxidation a vital processing step in both bipolar and MOS technologies.…”

Section: Introductionmentioning

confidence: 99%

Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Films

Green

Gross

Papa

et al. 1985

J. Electrochem. Soc.

235

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The preparation of Ru and RuO2 thin films by organometallic chemical vapor deposition and an investigation of the films' properties are reported. Ru is of interest for metallization in integrated circuit fabrication because its thermodynamically stable oxide, RuO2 , also exhibits metallic conductivity. As a result, oxidation during processing of Ru is a less critical concern than in current metallization technology. Taking advantage of the benefits of chemical vapor deposition, such as conformal coverage and low temperature, damage‐free deposition, we have deposited Ru, RuO2 , and normalRu/RuO2 by pyrolysis of three organoruthenium complexes. Films of a given phase composition were deposited under a wide variety of conditions and exhibited large variations in electrical resistivity and carbon content. The best Ru film, produced from Ru3false(CO)12 at 300°C in vacuum, had a resistivity of 16.9 μΩ‐cm and exhibited excellent adhesion to Si and SiO2 substrates. The best RuO2 film, produced from normalRufalse(C5H5)2 at 575°C in O2 , had a resistivity of 89.9 μΩ‐cm and similarly exhibited excellent adhesion. Rutherford backscattering studies show that Ru and RuO2 films are effective diffusion barriers between Al and Si up to annealing temperatures of about 550° and 600°C false(1/2 normalh exposurefalse) , respectively. Thus, they are significantly better than the currently used W films, which are only effective to about 500°C.

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“…При СД отмечается повышенный уро вень ИФРСБ-1 [17,54], степень повышения которого увеличивается при ухудшении метаболиче ского контроля. Повышенные уровни ИФРСБ-1 способствуют снижению активности ИФР и поддер живают гиперсекрецию СТГ и нарушения углевод ного обмена.…”

Section: обзорыunclassified

STG i IFR-1 pri sakharnom diabete: rol' v patogeneze mikrososudistykh oslozhneniy

Волеводз¹,

Toshchevikova²

2000

Diabetes mellitus

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Psychobiography and Psychohistory

Cited by 11 publications

References 72 publications

APA presidential addresses: The relation of integrative complexity to historical, professional, and personal factors.

APA presidential addresses: The relation of integrative complexity to historical, professional, and personal factors.

Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Films

STG i IFR-1 pri sakharnom diabete: rol' v patogeneze mikrososudistykh oslozhneniy

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