Pseudovertical Schottky Diodes on Heteroepitaxially Grown Diamond

Abstract

Substrates comprising heteroepitaxially grown single-crystalline diamond epilayers were used to fabricate pseudovertical Schottky diodes. These consisted of Ti/Pt/Au contacts on p− Boron-doped diamond (BDD) layers (1015–1016 cm−3) with varying thicknesses countered by ohmic contacts on underlying p+ layers (1019–1020 cm−3) on the quasi-intrinsic diamond starting substrate. Whereas the forward current exhibited a low-voltage shunt conductance and, for higher voltages, thermionic emission behavior with systematic dependence on the p− film thickness, the reverse leakage current appeared to be space-charge-limited depending on the existence of local channels and thus local defects, and depending less on the thickness. For the Schottky barriers ϕSB, a systematic correlation to the ideality factors n was observed, with an “ideal” n = 1 Schottky barrier of ϕSB = 1.43 eV. For the best diodes, the breakdown field reached 1.5 MV/cm.

Formation of {111} oriented domains during the sputtering epitaxy growth of (001) oriented Iridium films

“…etching-depo YSZ-carrier exchange in air-optional second etching-depo Ir. YSZ is deposited similar as described before [26] using 4 ′′ Y 0.15 Zr 0.85 targets (Evochem or ACI alloys, 99.9%). The Y:Zr ratio remains the same in the YSZ films which can be verified by Raman spectroscopy [27] (see supplement).…”

Epitaxial Lateral Overgrowth of Wafer‐Scale Heteroepitaxial Diamond for Quantum Applications

“…Additional details on the sputter and CVD equipment along with a description of the technological procedures can be found elsewhere. [ 7–9 ]…”

“…Additional details on the sputter and CVD equipment along with a description of the technological procedures can be found elsewhere. [7][8][9] All HD films are deposited using a [100] preferential growth mode (α!3). [3] In this particular case, a growth rate (R hkl ) DOI: 10.1002/pssa.202300325 Wafer-scale heteroepitaxial diamond thin films demonstrate multiple advantages for a further development of integrated optical and quantum devices based on impurity-vacancy color centers.…”

CVD Encapsulation of Laser-Graphitized Electrodes in Diamond Electro-Optical Devices

“…Diamond is a unique material with a number of record-breaking properties. Its electrical breakdown threshold is up to 2-10 MV/cm [1][2][3], making it attractive for highvoltage applications, such as field electron transistors [4][5][6][7][8], switching diodes [9][10][11][12][13], highenergy particle trapping [14][15][16][17][18], photoconductive antennas [19][20][21][22] and others. The thermal conductivity of diamond (24 W/cm•K) [23] is even higher than that of copper, which allows it to effectively dissipate heat [24][25][26][27][28].…”