2005
DOI: 10.1116/1.2101791
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Proximity effect correction using blur map in electron projection lithography

Abstract: Erratum: "Proximity exposure effect analysis using the phenomenon of resist debris formation in electron beam lithography" [J.Proximity exposure effect analysis using the phenomenon of resist debris formation in electron beam lithography Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography J.

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Cited by 3 publications
(2 citation statements)
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“…In general, increasing beam current density will degrade beam resolution due to the Coulomb interaction effects. 30,[52][53][54][55][56] This will be addressed by optimizing the electron optical parameters that affect the effects. Optimizing writing strategy including the PLDC, which is related with M s and B b , is also a key element.…”
Section: Future Of Mbm Seriesmentioning
confidence: 99%
“…In general, increasing beam current density will degrade beam resolution due to the Coulomb interaction effects. 30,[52][53][54][55][56] This will be addressed by optimizing the electron optical parameters that affect the effects. Optimizing writing strategy including the PLDC, which is related with M s and B b , is also a key element.…”
Section: Future Of Mbm Seriesmentioning
confidence: 99%
“…With increased beam current density, we need to cope with the Coulomb interaction effects [6][7][8][9][10][11] . They degrade beam resolution due to repulsion of electrons, and the degradation becomes more prominent as the total beam current increases.…”
Section: System Designmentioning
confidence: 99%