Proving Scalability of an Organic Semiconductor To Print a TFT-Active Matrix Using a Roll-to-Roll Gravure

Sun, Junfeng; Park, Hyejin; Jung, Younsu; Rajbhandari, Grishmi; Maskey, Bijendra Bishow; Sapkota, Ashish; Azuma, Yasuo; Majima, Yutaka; Cho, Gyoujin

doi:10.1021/acsomega.7b00873

Cited by 37 publications

(33 citation statements)

References 44 publications

(67 reference statements)

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“…The isotropic printability of the gate, dielectric, semiconductor, and drain–source by utilizing the R2R gravure was optimized and confirmed previously by printing the TFT‐active matrix at a printing speed of 6 m min −1 . [ 11,15,16 ] In printing TFTs, the OPRA for machine and transverse directions were controlled in real time at a printing speed of 6 m min −1 by utilizing the servomechanism based on three charge‐coupled device cameras as shown in Figure a. The first camera detects the printed registration maker from the 1st printing unit, and the second camera monitors the registration mark in the 2nd gravure cylinder.…”

Section: Resultsmentioning

confidence: 99%

The First Step towards a R2R Printing Foundry via a Complementary Design Rule in Physical Dimension for Fabricating Flexible 4‐Bit Code Generator

Park

Sun

Jung

et al. 2020

Adv Elect Materials

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what has demanded from practical applications for collecting the big data. Therefore, to resolve the cost issues, a R2R printing foundry has been highly attracted because the flexible passive components (such as sensor electrodes, capacitors, and antenna) are able to integrate with their flexible active components (such as display, processor, [3] transponder, [4] analogto-digital converter (ADC), [5] operation amplifier [6]) through a R2R inline printing system. [7] However, although sensor electrodes, [8] capacitors, [9] antenna, [10] and thin film transistor (TFT) active matrix-based display [11] have been successfully printed via R2R printing method, they cannot integrate with flexible active components yet through the R2R inline printing system so far. The major reason in difficulty of inline integration of R2R printed passive components with the flexible active components was mainly originated from the incompatibility between printing and vacuum deposition techniques, employed in manufacturing those flexible active components. Although a printing process was incorporated with the vacuum deposition methods in fabricating those flexible active components, it was limited to fabricating only the semiconducting layers, [12] and lacked the scalability required for practical mass production. Thus, those hybrid vacuum deposition and printing processes cannot be incorporated into the R2R printing foundry. To establish the R2R printing foundry concept, the design rule that encompasses physical dimensions and electrical parameters of the fully printed devices should be first established. The design rule in a semiconductor fabrication plant-referred to as the foundry-is a compromised rule between circuit design engineers and process engineers to provide the geometry of an integrated circuit layout with an acceptable cost. However, unlike the Si-chip foundry, the printed devices' physical dimensions and electrical parameters are variable to the rheological parameters of the electronic inks, the web tension, printing speed, and overlay printing registration accuracy (OPRA) of employed R2R printer. Therefore, the design rule of the R2R printing foundry (Figure 1a) should be always comprising characteristics of both employed ink and R2R printer to prove that the R2R printed complementary metal-oxide-semiconductor (CMOS)-based active

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Section: Resultsmentioning

confidence: 99%

The First Step towards a R2R Printing Foundry via a Complementary Design Rule in Physical Dimension for Fabricating Flexible 4‐Bit Code Generator

Park

Sun

Jung

et al. 2020

Adv Elect Materials

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“…The main solution-based fabrication techniques that are compatible across each of these size scales include technologies such as slot-die coating, screen printing, flexographic printing, gravure coating, electrospraying, and inkjet printing (Figure 6) [103,111,[117][118][119][120][121]. These techniques each have their own unique advantages and disadvantages, but all use the same principle of transferring an ink from a solution reservoir to a solid substrate using various mediums to pattern the ink deposition as desired.…”

Section: Printed Device Fabricationmentioning

confidence: 99%

Printable Organic Semiconductors for Radiation Detection: From Fundamentals to Fabrication and Functionality

et al. 2020

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The deployment of organic semiconducting materials for radiation detection is an emerging and highly attractive area of materials science research. These organic materials offer the enticing vision of technologies created from low-cost materials that can be printed on-demand with a range of different tailored optoelectronic functionalities. An explosion in the number of available materials, improved functionality of materials, and sophistication of solution-based device fabrication techniques for organic semiconductors in recent years have led to considerable opportunities for the utilization of organic materials in the detection of ionizing radiation. While the potential of organic semiconducting materials for low-cost radiation detection is clear, transitioning these printable materials to a commercial reality presents a significant scientific challenge. In this work, we provide a comprehensive analysis of the use of organic semiconductors for radiation detection. We discuss the fundamental physics of these materials and how their conduction mechanisms, including charge generation and charge transport, differ significantly from established inorganic semiconductors. Various strategies employed to control the nanostructure in organic semiconductors to optimize charge generation and transport for radiation detection are discussed. We provide insights into the strategies employed to fabricate organic semiconducting devices at industrially relevant scales using roll-to-roll solution processing and finally discuss existing examples of organic semiconducting materials utilized in the radiation detection arena.

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“…However, the switching behavior of these devices with PVP‐thicknesses above 1 µm appeared to be rather poor with on–off current ratios of only 10 2 . Besides these few reports, the operating voltages in the literature are commonly around 20 V or above when scalable processes are employed . Moreover, most of the low‐voltage devices with dielectrics fabricated by scalable processes still show a limited performance with field‐effect mobility values rarely exceeding 1 cm 2 V −1 s −1 .…”

Section: Introductionmentioning

confidence: 99%

“…Printing and coating technologies are attractive as high‐throughput deposition techniques for all kind of functional materials, stimulating the development of printed electronics. Despite this, among the reports found on fully solution‐processed organic devices, most contain thick dielectric films prohibiting their operation at reasonably low voltages, or they are prepared by processes incapable of being scaled up to the proposed large area, roll‐to‐roll (R2R) technologies.…”

Section: Introductionmentioning

confidence: 99%

Solution Shearing of a High‐Capacitance Polymer Dielectric for Low‐Voltage Organic Transistors

Haase

Zessin

Zoumboulis

et al. 2019

Adv Elect Materials

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With the prospect of realizing innovative technologies by large‐area fabrication at low cost and high throughput, printing and coating technologies are being intensively researched for the deposition of functional films. One promising coating technology is solution shearing, which has been studied as a deposition technique for organic semiconductors but not to a greater extent for dielectric layers. Therefore, the deposition by solution shearing of high‐quality poly(4‐vinylphenol) dielectrics is investigated, and the utility of these films as ultra‐smooth dielectric substrates for transistors is demonstrated. By comparing these films to those prepared by spin‐coating, it is possible to highlight the advantages of the technique. Specifically, thinner films with thicknesses as low as 11.4 nm but still low leakage and almost identical surface properties can be achieved. Thus, dielectric films with a very high capacitance of 280 nF cm‐2 are realized in a single coating step. Probing these films within organic transistors shows that they can facilitate operation at voltages as low as ‐1 V. Finally, it is shown how the use of a polymer‐small‐molecule–semiconductor blend can pave the way toward high‐performance, ultra‐low‐voltage devices from solution.

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Proving Scalability of an Organic Semiconductor To Print a TFT-Active Matrix Using a Roll-to-Roll Gravure

Cited by 37 publications

References 44 publications

The First Step towards a R2R Printing Foundry via a Complementary Design Rule in Physical Dimension for Fabricating Flexible 4‐Bit Code Generator

The First Step towards a R2R Printing Foundry via a Complementary Design Rule in Physical Dimension for Fabricating Flexible 4‐Bit Code Generator

Printable Organic Semiconductors for Radiation Detection: From Fundamentals to Fabrication and Functionality

Solution Shearing of a High‐Capacitance Polymer Dielectric for Low‐Voltage Organic Transistors

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