Proton Irradiation Enhancement of Low-Field Negative Magnetoresistance Sensitivity of AlGaN/GaN-Based Magnetic Sensor at Cryogenic Temperature

Abderrahmane, Abdelkader; Okada, Hiroshi; Sato, Shin-ichiro; Ohshima, Takeshi; Sandhu, Adarsh

doi:10.1109/led.2014.2358613

Cited by 10 publications

(5 citation statements)

References 15 publications

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“…These flexible fabrics are also useful for different biomedical applications like magnetic cell separation membranes [3], magnetic resonance imaging contrast agents [4], etc. Their application could also be extended to spintronics and power electronic devices at extremely low temperatures [5,6]. Iron (III) oxide (Fe 3 O 4 ) nanoparticles are a valuable additive because of their electronic, magnetic, optical, and mechanical properties [7].…”

Section: Introductionmentioning

confidence: 99%

“…However, their limitations were attributed to the poor dispersion of Fe 3 O 4 nanoparticles and poor processability. The ruggedness of composites has also been limited at low temperature applications such as spintronics and power electronic devices at cryogenic conditions (<123 K) [5,6]. Thermal stresses paired with low temperature brittleness have been associated with this weakness.…”

Section: Introductionmentioning

confidence: 99%

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Electrospun Fe3O4-PVDF Nanofiber Composite Mats for Cryogenic Magnetic Sensor Applications

2021

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Magnetically responsive, mechanically stable and highly flexible iron (III) oxide-polyvinylidene fluoride (Fe3O4-PVDF) piezoelectric composite fiber mats were fabricated via one step electrospinning method for magnetic sensing at cryogenic temperature. The properties of Fe3O4-PVDF composite fiber mats were characterized using scanning electron microscopy (SEM), differential scanning calorimetry (DSC), X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, d33 and magnetization test. The fiber diameter decreased as the concentration of Fe3O4 increased. The DSC results suggested a decrease in the crystallinity of the composite fiber mats after adding Fe3O4, and the XRD curves identified that the decrease in crystallinity took place in the β crystalline phases of the fibers. FT-IR results further confirmed the reduction of β phases of the composite fiber mats which dropped the piezoelectric response of the fiber mats by 38% for 5% Fe3O4-PVDF than PVDF fiber but still 400% higher than PVDF pellets. The magnetization test advocated a superparamagnetic state of the fiber at room temperature but a ferromagnetic behavior at a lower temperature. The coercivity values of the mats suggested a homogeneous dispersion of the Fe3O4 nanoparticles into the PVDF matrix. Young’s modulus (E) of the fibers remained the same before and after the magnetization test, indicating the mechanical stability of the fiber in the range of 5 K to 300 K. Its mechanical stability, superparamagnetic behavior at room temperature and ferromagnetic at low temperature could open up its application in spintronic devices at cryogenic temperature and cryogenic power electronic devices.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrospun Fe3O4-PVDF Nanofiber Composite Mats for Cryogenic Magnetic Sensor Applications

2021

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“…GaN heterostructures have a 2D electron gas (2DEG) that is formed when a nanometer-thick layer of unintentionally doped aluminum or indium gallium nitride (AlGaN or InGaN) is deposited on an underlying GaN buffer layer. The 2DEG, created from differences in the polarization fields of the III-nitride layers [8], [9], has a high electron mobility (1500 to 2000 cm 2 /V·s at room temperature) [2], [5], [10]- [12], which enables high sensitivity devices. Further, 2DEG-based Halleffect sensors have the potential for lower magnetic field offsets than silicon-based devices [13]- [15].…”

Section: Introductionmentioning

confidence: 99%

“…This temperature limitation can be overcome by using a material with a wide bandgap, such as gallium nitride (GaN). In particular, heterostructures made using GaN have previously shown operation up to 1000°C [4] and radiation hardness beyond that of silicon [5], [6], making it a viable material for space applications. It has additionally become a prime material platform for power electronics monitoring due to its durable nature and potential for monolithic integration with electronics [7].…”

Section: Introductionmentioning

confidence: 99%

Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-Effect Sensors

et al. 2019

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The current-and voltage-scaled sensitivities and signal-to-noise ratios (SNR) (with respect to thermal noise) of various octagonal AlGaN/GaN and InAlN/GaN Hall-effect sensors were examined in this work. The effect of metal contact lengths on sensitivity and sensor offset was evaluated. Calculations that take into account the shape of the device show that devices with point-like contacts have the highest current-scaled sensitivity (68.9 V/A/T), while devices with contacts of equal length to their non-contact sides have the highest voltage-scaled sensitivity (86.9 mV/V/T). The sensitivities of the two other devices follow the predicted trends closely. All the devices have offsets less than 20 µT at low supply current operation (< 300 µA) and most remain below 35 µT at higher supply current (up to 1.2 mA). The consistent low offsets across the devices imply that the choice of Hall-effect sensor geometry should mainly depend on whether the device is currentbiased or voltage-biased and the frequency at which it will operate. This work demonstrates that GaN Hall-effect sensor performance can be improved by adjusting the geometry of the Hall-effect plate specific to its function (e.g., power electronics, navigation, automotive applications).Index Terms-Hall effect, gallium nitride, AlGaN/GaN, InAlN/GaN, offset voltage, sensitivity, geometry. Engineering

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“…Hence, researches on the irradiated characteristics and the radiation hardening technique are of great significance [3,4,5]. A number of articles reported about the electrical characteristics of the MOS device under radiation effect [4,5,6,7,8]. V th , as an important electrical parameter of a device, has been studied extensively.…”

Section: Introductionmentioning

confidence: 99%

Total ionizing dose radiation effect on the threshold voltage for the uniaxial strained Si nano NMOSFET

Hao¹,

Hu²,

Liao³

et al. 2017

IEICE Electron. Express

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Abstract:The carrier microscopic transport process of uniaxial strained Si n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) has been analyzed under γ-ray radiation. The variation of oxide-trapped charge (N ot ) and interface-trap charge (N it ) with the total dose has also been investigated. A two-dimensional analytical model of threshold voltage (V th ) has been developed with the degradation due to the total dose irradiation taken into consideration. Based on this model, numerical simulation has been carried out by Matlab, and the influence of the total dose, geometry and physics parameters on threshold voltage (V th ) were simulated. In addition, to evaluate the validity of the model, the simulation results were compared with experimental data, and good agreements were confirmed. Thus, the proposed model provides good reference for research on irradiation reliability and application of strained integrated circuit of uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistor.

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Proton Irradiation Enhancement of Low-Field Negative Magnetoresistance Sensitivity of AlGaN/GaN-Based Magnetic Sensor at Cryogenic Temperature

Cited by 10 publications

References 15 publications

Electrospun Fe3O4-PVDF Nanofiber Composite Mats for Cryogenic Magnetic Sensor Applications

Electrospun Fe3O4-PVDF Nanofiber Composite Mats for Cryogenic Magnetic Sensor Applications

Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-Effect Sensors

Total ionizing dose radiation effect on the threshold voltage for the uniaxial strained Si nano NMOSFET

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