Proton implanted waveguides in LiNbO₃, KNbO₃and BaTiO₃

Self-Action of Light Fields in Waveguide Photon Structures Based on Electro-Optic Crystals

“…The planar waveguides with high optical quality were obtained in SBN wafers by implantation of ions H + , He + , B, and C [6,7,17]. It was established that this process led to the formation of the layer with the decreased refractive index at a certain distance from the exposed surface playing the role of insulating region in the waveguide -insulating layer - , more com photorefractive f direct laser in [17].…”

“…Recently, to form the waveguide and phase diffraction elements, implantation of ions of several elements into the near-surface region of crystalline and amorphous materials with corpuscular beams is widely used [6][7][8][9]17]. Planar and channel waveguide structures were formed in LiNbO 3 crystals by implantation of protons (H + ), helium ions (He + ), and other elements (Li, C, O, Ca, Si, F, Cl, Kr, Xe) [17] with energies of corpuscular beams from several hundreds of keV to several tens of MeV.…”

“…The nonlinear optical response of these crystals can be manifested at extremely low light intensities due to their photorefractive and pyroelectric properties [13,14]. Stationary waveguide structures in LiNbO 3 are formed by the methods of diffusion [3,4], proton lithium exchange, and ion implantation [5,[6][7][8] as well as upon exposure to high intensity radiation of femtosecond lasers [15][16][17]. Optical waveguides with low losses in SBN crystal samples can be formed by ion implantation [7 17].…”

“…The methods for this modification have been developed and tested in the process of development of semiconductor microelectronics. These methods involve diffusion doping, ion-exchange processes, implantation of impurity ions by corpuscular beams, and epitaxial growth of crystalline layers on the substrate surface [3][4][5][6][7][8][9][10]. The refractive index of the material can also vary under the effect of elastic or electric fields as well as due to a nonlinear optical effect [11,12].…”

Buried planar and channel waveguides in sapphire and Ti:sapphire by proton implantation

“…Nevertheless, buried waveguides are associated with the absence of surface scattering losses and reduction of mode-propagation losses owing to the mode asymmetry commonly encountered in superficial waveguides. Light ion beam implantation is known as an alternative method for the fabrication of optical waveguides [4,5]. Recently, good guiding properties were demonstrated in proton-implanted sapphire surface waveguides [6,7].…”