Proton implantation effects on electrical and recombination properties of undoped ZnO

Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Кожухова, Е. А.; Vdovin, V. I.; Ip, K.; Overberg, M. E.; Heo, Young‐Woo; Norton, D. P.; Pearton, S. J.; Zavada, J. M.; Dravin, V. A.

doi:10.1063/1.1597944

Cited by 81 publications

(42 citation statements)

References 16 publications

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“…There have also been a number of reports on laser emission from ZnO-based structures at room temperature (RT) and beyond. Several experiments confirmed that ZnO is very resistive to high energy radiation [9][10][11] making it a very suitable candidate for space applications. ZnO is easily etched in all acids and alkalis, and this provides an opportunity for fabrication of devices with considerable ease.…”

Section: Introductionmentioning

confidence: 75%

Preparation and properties of ZnO and devices

Izyumskaya

Avrutin

Özgür

et al. 2007

Physica Status Solidi (b)

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ZnO has gained interest in part because of its large exciton binding energy (60 meV), good for lasing with low threshold. The renewed interest in ZnO is fuelled by availability of high quality substrates, reports of p-type conductivity, and ferromagnetic behavior when doped with transitions metals. The field is also fuelled by theoretical predictions and perhaps experimental confirmation of ferromagnetism at room temperature for potential spintronics applications. Despite great strides there are still many challenges, the chief among them is the attainment of reproducibly low resistivity p-type ZnO. While ZnO already has many industrial applications owing to its piezoelectric properties and bandgap in the near UV, its applications to optoelectronic devices utilizing electrical injection has not yet been put to practice mainly due to the lack of p-type epitaxial layers. This review provides a discussion of some of the growth issues of ZnObased epitaxial and heteroepitaxial layers and their use in a variety of devices.

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Section: Introductionmentioning

confidence: 75%

Preparation and properties of ZnO and devices

Izyumskaya

Avrutin

Özgür

et al. 2007

Physica Status Solidi (b)

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“…The 0.9-eV hole trap was reported in vapor transport grown bulk ZnO, for both a virgin sample and a sample implanted with 100-keV protons. 18 In Ref. 18, the authors invoked an early review that related these centers to oxygen vacancies.…”

Section: Resultsmentioning

confidence: 99%

“…18 In Ref. 18, the authors invoked an early review that related these centers to oxygen vacancies. In contrast to the behavior of the other traps, the DLTS signal of H5 shows an anomalous increase as the measurement period T W increases ͑or the "rate window" decreases͒, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Electron and hole traps in N-doped ZnO grown on p-type Si by metalorganic chemical vapor deposition

Fang

Claflin

Kerr

et al. 2007

Journal of Applied Physics

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Electron and hole traps in N-doped ZnO were investigated using a structure of n + -ZnO:Al/ i-ZnO/ ZnO:N grown on a p-Si substrate by metalorganic chemical vapor deposition ͑for growth of the ZnO:N layer͒ and sputtering deposition ͑for growth of the i-ZnO and n + -ZnO:Al layers͒. Current-voltage and capacitance-voltage characteristics measured at temperatures from 200 to 400 K show that the structure is an abrupt n + − p diode with very low leakage currents. By using deep level transient spectroscopy, two hole traps, H3 ͑0.35 eV͒ and H4 ͑0.48 eV͒, are found in the p-Si substrate, while one electron trap E3 ͑0.29 eV͒ and one hole trap H5 ͑0.9 eV͒ are observed in the thin ZnO:N layer. Similarities to traps reported in the literature are discussed.

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“…Through first principles total energy calculations, we show that the transition between α-and β-type configurations results in metastable behavior of these defects. Specifically, we predict that the oxygen vacancy V O leads to persistent electron photoconductivity (n-type PPC) in n-ZnO observed recently after proton irradiation [18], whereas the Se vacancy V Se causes persistent hole photoconductivity (p-type PPC) in p-CuInSe 2 or p-CuGaSe 2 , constituting the unusual case where a donor-like defect causes p-type PPC. Thus, our results shed new light on hitherto unknown physical origin of the phenomenon of light-induced metastability in chalcopyrite CuInSe 2 based photovoltaic devices exhibiting p-type PPC [19,20,21,22,23].…”

Section: Introductionmentioning

confidence: 99%

Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors

2005

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Using first-principles electronic structure calculations we identify the anion vacancies in II-VI and chalcopyrite Cu-III-VI 2 semiconductors as a class of intrinsic defects that can exhibit metastable behavior. Specifically, we predict persistent electron photoconductivity (n-type PPC) caused by the oxygen vacancy V O in n-ZnO, and persistent hole photoconductivity (p-type PPC) caused by the Se vacancy V Se in p-CuInSe 2 and p-CuGaSe 2 . We find that V Se in the chalcopyrite materials is amphoteric having two "negative-U" like transitions, i.e. a double-donor transition ε(2+/0) close to the valence band and a double-acceptor transition ε(0/2−) closer to the conduction band. We introduce a classification scheme that distinguishes two types of defects (e.g., donors): type-α, which have a defect-localized-state (DLS) in the gap, and type-β, which have a resonant DLS within the host bands (e.g., conduction band). In the latter case, the introduced carriers (e.g., electrons) relax to the band edge where they can occupy a perturbedhost-state (PHS). Type α is non-conducting, whereas type β is conducting. We identify the neutral anion vacancy as type-α and the doubly positively charged vacancy as type-β. We suggest that illumination changes the charge state of the anion vacancy and leads to a crossover between α-and β-type behavior, resulting in metastability and PPC. In CuInSe 2 , the metastable behavior of V Se is carried over to the (V Se -V Cu ) complex, which we identify as the physical origin of PPC observed experimentally. We explain previous puzzling experimental results in ZnO and CuInSe 2 in the light of this model.

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Proton implantation effects on electrical and recombination properties of undoped ZnO

Cited by 81 publications

References 16 publications

Preparation and properties of ZnO and devices

Preparation and properties of ZnO and devices

Electron and hole traps in N-doped ZnO grown on p-type Si by metalorganic chemical vapor deposition

Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors

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