Proton-Driven Intercalation and Ion Substitution Utilizing Solid-State Electrochemical Reaction

Fujioka, M.; Wu, Chuanbao; Kubo, Naoki; Zhao, Gaoyang; Inoishi, Atsushi; Okada, Shigeto; Demura, Satoshi; Sakata, Hideaki; Ishimaru, Manabu; Kaiju, Hideo; Nishii, Junji

doi:10.1021/jacs.7b09328

Cited by 14 publications

(13 citation statements)

References 39 publications

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“…Therefore, the atomic intercalation plays a "tensile pressure"-like role to enlarge the lattice constant along b axis. Similar intercalation induced lattice expansion has also been reported in some other layered materials [53,54]. However, in the recent study of K intercalated WTe2 [47], there is no detectable lattice expansion.…”

Section: Resultssupporting

confidence: 79%

Turning ZrTe5 into a semiconductor through atom intercalation

Wang

et al. 2019

Sci. China Phys. Mech. Astron.

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In this work, we use the liquid ammonia method to successfully intercalate potassium atoms into ZrTe5 single crystal, and find a transition from semimetal to semiconductor at low temperature in the intercalated ZrTe5. The resistance anomalous peak is gradually suppressed and finally disappears with increasing potassium concentration. Whilst, the according sign reversal is always observed in the Hall resistance measurement. We tentatively attribute the semimetal-semiconductor transition to the lattice expansion induced by atomic intercalation and thereby a larger energy band gap.Recently, ZrTe5 has attracted increasing attentions because of its mysterious topological nature. DFT calculation predicted that the single-layer ZrTe5 is an ideal two-dimensional topological insulator (2D TI) hosting an indirect band gap of ~0.1 eV [9], but its bulk counterpart resides in proximity of the boundary of topological phase transition from weak to strong TI, through a 3D Dirac semimetal state [9][10][11].Even though great efforts have been devoted to experimentally verify the topological characteristics, the topology of bulk ZrTe5 is still under heavy debate. Either weak TI, strong TI or Dirac semimetal state, has ever been proposed based on the experimental observations with different techniques . The bulk band gap and the topological edge state were detected by ARPES and by STM [14,15,29], which indicates that ZrTe5 is a weak TI. Controversially, signatures of 3D Dirac semimetal were also demonstrated in magnetoresistance [18][19][20]32] and magneto-infrared spectroscopy measurements [12,13,17,24,25]. The strong TI of ZrTe5 has been also proposed [21,27]. In addition, more exotic physical properties have been also found in this material, such as Zeeman splitting [20,33,34], Chiral Magnetic effect (CME) [16], 3D Quantum Hall effect (QHE) [35], Anomalous Hall effect (AHE) [36], Giant Planar Hall Effect (PHE) [37], and Discrete Scale Invariance (DSI) [38,39].Considering the extreme sensitivity of the band structure of ZrTe5 to the lattice constant, the above mentioned experimental divergence may be likely due to the difference in sample growth. It is worthwhile noting that the Dirac node of ZrTe5 is not protected by the crystal symmetry, and a band gap can be opened by a perturbation to turn it into topological insulator. High Pressure was applied to tune ZrTe5 into superconductivity [40], and to induce topological phase transition [41]. The exfoliated ZrTe5 nanosheet shows metallic behavior and tunable resistance maximum, which can be ascribed to the thickness-dependent band structure [42,43]. Up to now, most of the explored ZrTe5 bulk samples, grown by CVT method, behave as metallic

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Section: Resultssupporting

confidence: 79%

Turning ZrTe5 into a semiconductor through atom intercalation

Wang

et al. 2019

Sci. China Phys. Mech. Astron.

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“…There are two peaks at ~293 eV and 295 eV in C1s spectrum, showing nonnegligible intensity. These peaks were identi ed by Nishii et al as the K 2p, which could be caused by impurities containing K [35]. N is in a form of C=N and N-H evidenced by the highresolution peaks at 398.8 eV and 399.8 eV respectively (Fig.…”

Section: Morphological and Chemical Characterization Of Cnpsmentioning

confidence: 95%

Carbon nanoparticles induce DNA repair and PARP inhibitor resistance associated with nanozyme activity in cancer cells

Fan

Sun

Dukenbayev

et al. 2022

Preprint

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Background Quantum nanodots especially carbon nanoparticles (CNPs) have been widely studied in biomedicine in imaging, drug delivery, but anti-cancer mechanisms remain elusive. Methods Here we studied on a type of cell death induced by food (beet, soybean) derived CNPs in cancer cells and tested whether CNPs induced DNA damage and resistant to anticancer agent PARP inhibitor (PARPi) could be overcome by quantum calculation, SEM, TEM, AFM, FT-IR, soft agar assay, and cytotoxicity assay. Results At high doses, CNPs derived from beet lead to a pop-like apoptosis of cells. Quantum mechanical calculation confirmed CNPs binding with phosphate groups as well as DNA bases. At low doses, CNPs develop PARPi drug resistance through interactions between CNPs and PARPi. A synergistic drug effect was achieved with the combination of phosphatase inhibitor (PPi), PARPi and CNPs. This is corroborated by the fact that a sulfur modulated CNPs which exhibit super high phosphatase nanozyme activity abrogated the CNPs induced colony formation in anchorage-independent cancer cell growth. Conclusion Thus, our data suggest the CNPs intrinsic nanozyme activity of phosphatase may crosstalk with drug resistance, which can be reversed upon modulations.

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“…Also, the superconducting transition was determined via magnetic measurements using a superconducting quantum magnetometer (Quantum Design, Magnetic Property Measurement System). The density of states (DOS) of Ag24Ta54S108 with stage-1 (186 atoms), Ag12Ta54S108 with stage-2 (174 atoms) and Ag4Ta54S108 with stage-3 (166 atoms) structures were calculated using the Vienna ab-initio simulation package (VASP) based on DFT [25,26]. The generalized gradient approximation (GGA) method was implemented in the plane-wave code [27].…”

Section: Methodsmentioning

confidence: 99%

Discovery of Ag_xTaS₂ superconductor with stage-3 structure

et al. 2020

Self Cite

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Through interfacial engineering, such as ion intercalation, we can tune the properties and optimize the performance of transition metal dichalcogenides and their devices. In this study, we present the first-time experimental investigations of stage 3 of AgxTaS2 single crystal, and its superconductivity was discovered at 3.8 K. Highly crystalline stage 1 and 2 were prepared by a proton-driven ion-introduction method. A simple water-soaking process was employed to achieve the stage-3 structure by deintercalation of Ag ions from lower stage structures. Besides, we developed a general stacking rule to determine the crystal structure, and it can predict any higher-order stage structure of AgxTaS2. The superconducting transition temperature was enhanced from 1.7 K for a stage-2 structure to 3.8 K for a stage-3 structure, which is more than four times that of the pristine TaS2 (0.8 K). This enhancement is attributed to the increase in density of states at the Fermi level, which was calculated by density functional theory. Also, the water-soaking process reconstructs the stage-2 into the stage-3 structure while deteriorating its crystallinity. Such a structural distortion is one of the potential reasons for the suppression of charge density wave in stage-2, resulting in the enhancement of superconductivity despite the structural degradation.

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Proton-Driven Intercalation and Ion Substitution Utilizing Solid-State Electrochemical Reaction

Cited by 14 publications

References 39 publications

Turning ZrTe5 into a semiconductor through atom intercalation

Turning ZrTe5 into a semiconductor through atom intercalation

Carbon nanoparticles induce DNA repair and PARP inhibitor resistance associated with nanozyme activity in cancer cells

Discovery of Ag_xTaS₂ superconductor with stage-3 structure

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Proton-Driven Intercalation and Ion Substitution Utilizing Solid-State Electrochemical Reaction

Cited by 14 publications

References 39 publications

Turning ZrTe5 into a semiconductor through atom intercalation

Turning ZrTe5 into a semiconductor through atom intercalation

Carbon nanoparticles induce DNA repair and PARP inhibitor resistance associated with nanozyme activity in cancer cells

Discovery of AgxTaS2 superconductor with stage-3 structure

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Discovery of Ag_xTaS₂ superconductor with stage-3 structure