2013
DOI: 10.1007/s00542-013-1794-z
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ProTEK PSB coating as an alternative polymeric protection mask for KOH bulk etching of silicon

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Cited by 11 publications
(5 citation statements)
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“…Firstly, the photolithography process was carried out on the top side of the wafer to define the microconcentrator design (step A) by using a specific negative-working photosensitive resist ProTEK® PSB (Brewer Science). The main feature of ProTEK® is its non-degradable character under alkaline etching conditions [48]. This property reveals essential for the herein proposed fabrication scheme due to the photosensitive coating has to support strong alkaline conditions during KOH etching (step B) and zeolite synthesis (step C).…”
Section: Microfabrication Processmentioning
confidence: 99%
“…Firstly, the photolithography process was carried out on the top side of the wafer to define the microconcentrator design (step A) by using a specific negative-working photosensitive resist ProTEK® PSB (Brewer Science). The main feature of ProTEK® is its non-degradable character under alkaline etching conditions [48]. This property reveals essential for the herein proposed fabrication scheme due to the photosensitive coating has to support strong alkaline conditions during KOH etching (step B) and zeolite synthesis (step C).…”
Section: Microfabrication Processmentioning
confidence: 99%
“…This is achieved by initially defining the etching regions by optical lithography on the wafer's backside (using resist Map-1215) and by the backside Si 3 N 4 removal with RIE. A protective coating (Protek B3) [23,25] is spun on the wafer's electrodes to protect them during the KOH etch. After the KOH etch, 50 μm of silicon is left and removed by a dry etch in the Viper tool.…”
Section: Nanofabricationmentioning
confidence: 99%
“…To do so, we performed a wet etch in potassium hydroxide using the backside nitride as a mask while protecting the wafer's frontwhere electrodes and wires are-with a 20 μm thick Protek B3 layer. 36 Once we obtained the photonic and electrical circuits on 25 μm thick membranes, we evaporated 30 nm of Chrome on the wafer's back. Finally, we released the devices by dry etching their shape from the wafer's front side and using a 40 μm thick photoresist (AZ 40 XT 11D) mask with 100 μm wide trenches [Figs.…”
Section: B Probe Nanofabricationmentioning
confidence: 99%