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Embargo lift dateRu. Silicon photoanodes with a 2 nm surface SiO 2 layer that are coated by these alloy Schottky contacts having compositions in the range of 13-46% RuO 2 exhibit average photovoltages of 525 mV, with a maximum photovoltage of 570 mV achieved. Depositing TiO 2 -RuO 2 alloys on nSi sets a high effective work function for the Schottky junction with the semiconductor substrate, thus generating a large photovoltage that is isolated from the properties of an overlying oxygen evolution catalyst or protection layer.