Protecting SRAM PUF from BTI Aging-based Cloning Attack

Duan, Shumin; Sai, Gaole

doi:10.1109/sbcci55532.2022.9893248

Cited by 4 publications

(4 citation statements)

References 19 publications

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“…In [5], the authors detailed how real-time effects due to high temperatures reduce the standard deviation of the frequency distribution of ring oscillators (ROs). Additionally, [6] explained how permanent temperature effects influence SRAM-PUF responses due to the aging process.…”

Section: B Permanent Effectsmentioning

confidence: 99%

Modeling Thermal Effects For Biasing PUFs

Douadi,

Vatajelu,

Maistri

et al. 2024

2024 IEEE European Test Symposium (ETS)

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Section: B Permanent Effectsmentioning

confidence: 99%

Modeling Thermal Effects For Biasing PUFs

Douadi,

Vatajelu,

Maistri

et al. 2024

2024 IEEE European Test Symposium (ETS)

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“…Technique Used Application [1] Experimental analysis, Simulation, Data collection Study of aging mechanisms' impact on SRAM PUFs and implications for security. [2] Quantitative analysis, Statistical modeling, Reliability assessment Quantification of aging effects on SRAM PUFs and their impact on reliability. [3] Vulnerability assessment, Attack scenarios Investigation of potential security risks arising from aging effects in SRAM PUFs.…”

Section: Snmentioning

confidence: 99%

“…[20,21] In the subsequent sections of this paper, we delve into the specifics of how BTI and HCI affect SRAM PUFs, exploring their implications for security, reliability, and potential mitigation strategies. By understanding these aging mechanisms, we aim to pave the way for the development of more robust and resilient SRAM PUF-based solutions in the face of semiconductor device aging [22,23] 3 Aging Mechanisms and Effects Bias Temperature Instability (BTI) is a well-known aging mechanism that affects the reliability of transistors in semiconductor devices. BTI occurs due to the accumulation of charges in the gate oxide of transistors over time.…”

Section: Aging In Semiconductor Devices: Bti and Hcimentioning

confidence: 99%

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Analyzing Aging Effects on SRAM PUFs: Implications for Security and Reliability

Bhatta,

Singh,

Amsaad

2023

Preprint

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Impact of aging effects on Static Random-Access Memory Physical Unclonable Functions (SRAM PUFs) presents critical implications for security and reliability in modern hardware. Emerging as promising hardware-based security primitives, SRAM PUFs harness process variations in integrated circuits for secure key generation and device authentication. However, aging phenomena like Bias Temperature Instability (BTI) and Hot Carrier Injection (HCI) can potentially alter SRAM cell characteristics, compromising PUF responses. This study delves into the multifaceted challenges of aging-induced variations, exposing underlying security vulnerabilities and offering innovative strategies to mitigate risks. Examining reliability implications, it introduces mitigation techniques such as adaptive reconfiguration, error correction codes, and multi-modal PUFs to enhance the resilience of SRAM PUFs. The investigation concludes by mapping future research directions and prospects for improving SRAM PUF-based security solutions, in light of the complexities associated with semiconductor device aging.

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Analyzing Aging Effects on SRAM PUFs: Implications for Security and Reliability

Bhatta,

Singh,

Ghimire

et al. 2024

J Hardw Syst Secur

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The aging effects on Static Random-Access Memory Physical Unclonable Functions (SRAM PUFs) pose significant security and reliability challenges for current hardware systems. SRAM PUFs utilize process variations in integrated circuits for secure key generation and device authentication. However, aging effects such as bias temperature instability (BTI) and hot carrier injection (HCI) may change SRAM cell characteristics and affect PUF responses. This study addresses various aging-induced variation challenges, identifies security vulnerabilities, and provides innovative approaches to risk reduction. Furthermore, this study focuses on concerns about SRAM PUF reliability. In this regard, mitigation approaches like adaptive reconfiguration, error correction codes, and multi-modal PUFs are introduced to enhance the resilience of SRAM PUFs. This study concludes by outlining future research directions and prospects for improving SRAM PUF-based security solutions by several orders of magnitude. This is carried out with various complexities related to semiconductor device aging.

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Protecting SRAM PUF from BTI Aging-based Cloning Attack

Cited by 4 publications

References 19 publications

Modeling Thermal Effects For Biasing PUFs

Modeling Thermal Effects For Biasing PUFs

Analyzing Aging Effects on SRAM PUFs: Implications for Security and Reliability

Analyzing Aging Effects on SRAM PUFs: Implications for Security and Reliability

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