Analyzing Aging Effects on SRAM PUFs: Implications for Security and Reliability

Abstract

The aging effects on Static Random-Access Memory Physical Unclonable Functions (SRAM PUFs) pose significant security and reliability challenges for current hardware systems. SRAM PUFs utilize process variations in integrated circuits for secure key generation and device authentication. However, aging effects such as bias temperature instability (BTI) and hot carrier injection (HCI) may change SRAM cell characteristics and affect PUF responses. This study addresses various aging-induced variation challenges, identifies security vulnerabilities, and provides innovative approaches to risk reduction. Furthermore, this study focuses on concerns about SRAM PUF reliability. In this regard, mitigation approaches like adaptive reconfiguration, error correction codes, and multi-modal PUFs are introduced to enhance the resilience of SRAM PUFs. This study concludes by outlining future research directions and prospects for improving SRAM PUF-based security solutions by several orders of magnitude. This is carried out with various complexities related to semiconductor device aging.